Elimination of interlayer Schottky barrier in borophene/C₄N₄ vdW heterojunctions via Li-ion adsorption for tunneling photodiodes

Abstract

The adsorption of Li-ions on the bottom site contributes to improve the photodetectivity and photoresponsivity in B/C4N4 vdW heterojunction photodiode, owing to the elimination of interlayer Schottky barrier.

Bilayer Heterostructure of Boron Nitride and Graphene for Hydrogen Storage: A First-Principles Study

“…ϕ T for the h-BN/Gr vdW heterostructure is found to be 7.794 eV (refer to Figure S13 in the Supporting Information). This tunneling barrier height is comparatively lower than the Gr/(010/100/001-Tellurene) (16.75–13.2–11.82 eV) and higher than the Borophene/(010/100/001-Tellurene) (0.93–1.78–0.25 eV) and lithium ion-intercalated boropheneC 4 N 4 vdW heterostructures. , The effect of hydrogen molecule adsorption on the tunneling barrier height is presented in Figure a–f. The presence of hydrogen molecules at the interface/cavity increases the tunneling barrier height (refer Figure a–c), whereas the presence of hydrogen molecules at the interface and the top layer reduces the tunneling barrier height (refer Figure d–f).…”

“…Thus, the presence of hydrogen molecules in such a region can influence the tunneling barrier height (ϕ T ). The value of ϕ T is calculated using the following equation , ϕ normalT = e ( V G r − V B N ) where V Gr and V BN are the electrostatic potentials of monolayer graphene and hexagonal boron nitride, respectively. Hartree difference potential for the hydrogen-adsorbed system is presented in Figure and labeled according to the hydrogen molecule concentration.…”

“…As reported by Rezvan et al, pristine B 3 CN 4 could hold hydrogen molecules with an average adsorption energy of −0.21 to −0.47 eV/H2 with a gravimetric density of 10.7 wt % . Light alkali-decorated B, N, C, and berellium (Be) compounds also show promising responses toward hydrogen adsorption. , There is an experimental evidence of the improved performance of van der Waals heterostructures in nano-electronics applications, sensors, optoelectronics, and photocatalyst. − Improvement of hydrogen storage by the TiO2/Mxene heterostructure has also been experimentally verified . Heterostructures built inside the metal hydrides are reported to boost hydrogen storage as well as the reversibility process …”

“…Thus, the presence of hydrogen molecules in such a region can influence the tunneling barrier height (ϕ T ). The value of ϕ T is calculated using the following equation 40,87 e V V ( )…”

Performance improvement in monolayered SnS2 double-gate field-effect transistors via point defect engineering

“…The existence of nonzero Φ e L reveals that the total current will be supplied by both thermionic current ( I therm ) and tunneling current ( I tunnel ) at the supply voltage. 60 A lower Φ e L will promote electron transport, which corresponds with the fact that I therm plays a leading role in the total current. When Se S is introduced into the SnS 2 ML, the rise of Φ e L from 0.83 eV to 1.07 eV at V ds = 0.64 V and V g = −1.0 V has impeded electron transport through the channel region and thus led to a lower I off , which means a smaller static power dissipation.…”