High-density MIM capacitors using AlTaO<sub>x</sub> dielectrics

Yang, Ming-Jui; Huang, Chao-Jen; Chin, Albert; Zhu, Chunxiang; Li, M.F.; Kwong, Dim‐Lee

doi:10.1109/led.2003.812572

Cited by 24 publications

(8 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…25 A similar effect is also observed in other high-k dielectrics from the quasi-static to the radio-frequency range. [26][27][28][29] Figure 3 ͑top and bottom͒ shows the NBTI characteristics of I ds -V gs and V t change ͑⌬V t ͒, respectively, for NiSi/Al 2 O 3 pMOSFETs stressed at 10 MV/cm electric field and 85°C ambient for 1 h. This stress condition was chosen for comparison with published data in the literature. 6,7 For reference and comparison, the ⌬V t of SiON pMOSFETs and the data of TaN/HfAlO 6 are also plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

Bias-Temperature Instability on Fully Silicided-Germanided Gates/High-k Al[sub 2]O[sub 3] CMOSFETs

Liao

Cheng

et al. 2005

J. Electrochem. Soc.

View full text Add to dashboard Cite

We have studied bias-temperature instability ͑BTI͒ on fully nickel-silicided ͑NiSi͒ and germanided ͑NiGe͒ gates on high-k Al 2 O 3 n metal oxide semiconductor field effect transistors ͑MOSFETs͒ and pMOSFETs, respectively. At an equivalent oxide thickness of 1.7 nm, the NiSi/Al 2 O 3 pMOSFETs and NiGe/Al 2 O 3 nMOSFETs have a comparable threshold voltage ͑V t ͒ change of −34 and 33 mV at 85°C and 10 MV/cm stress for 1 h. This result is different from the more severe negative BTI ͑NBTI͒ degradation measured in oxynitride pMOSFET than positive BTI ͑PBTI͒ in nMOSFET. The extrapolated maximum voltage for 10 years' lifetime is 1.16 and −1.12 V from NiSi-NiGe/Al 2 O 3 complementary MOSFETs ͑CMOSFETs͒ that can barely meet the required 1 V operation with 10% safety margin. Further improvement is still required because the 1.8 nm oxynitride CMOSFETs have higher 10 years' lifetime operation voltages of 2.48 and −1.52 V for PBTI and NBTI, respectively.The continuous scaling down of metal oxide semiconductor field effect transistor ͑MOSFET͒ devices to the sub-100 nm scale requires oxynitride or metal oxide high-k gate dielectrics, with an ultrathin equivalent oxide thickness ͑EOT͒, to replace the conventional SiO 2 to reduce the gate dielectric leakage current. To further increase the drive current in the MOSFET, a metal gate is integrated with these high-k gate dielectrics. 1-5 However, one of the main concerns of such metal gate/high-k MOSFETs is the poor biastemperature instability ͑BTI͒. 1,6-8 In particular, the negative BTI ͑NBTI͒ of pMOSFETs is becoming an increasingly serious problem for complementary metal oxide semiconductor ͑CMOS͒ reliability. The NBTI of oxynitride gate dielectric pMOSFETs is mainly related to, e.g., nitrogen traps, 9-12 hydrogen, 13,14 moisture ͑H 2 O͒, 14 and impurity diffusion. 6 Both NBTI and positive BTI ͑PBTI͒ are even worse in metal oxide high-k CMOSFETs than in oxynitride devices. 1,6-8 In this paper, we have studied the BTI effect on fully silicided-germanided ͑NiSi-NiGe͒ dual gates on high-k Al 2 O 3 CMOSFETs 5,15-19 and compared the results with those of benchmark oxynitride devices. The fully silicided gate has the advantage of full process compatibility to current very-large-scale integrated fabrication technology. The Al 2 O 3 gate dielectric has a reasonably high k and good thermal stability for the amorphous type up to 1000°C. 5,12,15-21 In contrast to the worse NBTI than PBTI found in oxynitride devices, the NBTI and PBTI are close in fully NiSi-NiGe gate/Al 2 O 3 CMOSFETs. At 1.7 nm EOT, the extrapolated maximum operation voltage ͑V max-10 years ͒ for 10 years' lifetime, with 50 mV threshold voltage ͑V t ͒ change at 85°C, is 1.16 and −1.12 V from PBTI and NBTI, respectively. These results are comparable with or better than the reported HfAlON 6 and HfSiON data. 7 The high V max-10 years and close value for both NBTI and PBTI may be due to the processes without hydrogen and H 2 O that were used during high-k HfAlON and HfSiON deposition by atomic layer deposition using NH 3 and H ...

show abstract

Section: Resultsmentioning

confidence: 99%

Bias-Temperature Instability on Fully Silicided-Germanided Gates/High-k Al[sub 2]O[sub 3] CMOSFETs

Liao

Cheng

et al. 2005

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…1 However, industry interest in alternate thin film high-κ dielectrics continued due to ever increasing capacitance density requirements. Many alternative high-κ insulators have been studied including Al 2 O 3 , 452,453 AlTiO 3 (ATO), [454][455] (Ba,Sr)TiO 3 (BST), [456][457][458][459] BiTaO, 460 (Bi,Ti)SiO 3 (BTSO), 461 HfO 2 , 462 HfSiO, 463 La 2 O 3 , 464 Sm 2 O 3 , 465 SrTiO 3 (STO), 457,[466][467][468][469] Ta 2 O 5 , 470,471 TiO 2 , 455,472 Y 2 O 3 , 473,474 and ZrO 2 . [475][476][477] The International Technology Roadmap for Semiconductors (ITRS) 2026 projections for MIM capacitors indicate a need for low equivalent oxide thickness (EOT) values near 1 nm while maintaining low leakage currents of 10 −8 A/cm 2 .…”

Section: Metal-insulator-metal Capacitors With High-κ Insulatorsmentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

show abstract

“…In order to predict the behavior of MIM capacitors in the high-frequency range [12], results of an electromagnetic 3-D simulator (ANSOFT HFSS) have been compared with the measurements. Comparison of results between the model and measured scattering parameters for the MIM capacitor is plotted in Fig.…”

Section: Electromagnetic Simulationmentioning

confidence: 99%

Impact of Design on High-Frequency Performance of Advanced MIM Capacitors Using Si$_{3}$N$_{4}$ Dielectric Layers

Piquet

Bermond

Thomas

et al. 2008

IEEE Trans. Comp. Packag. Technol.

View full text Add to dashboard Cite

High-frequency characterizations of ultra thin 32 nm PECVD Si 3 N 4 dielectric in an advanced metal-insulator-metal (MIM) capacitors are presented, with focus on the impact of design on the performance of MIM capacitors. Frequency dependent capacitance has been extracted over a wide range of frequency bandwidth. An equivalent model circuit of capacitors including four parameters was developed to explain this behavior. The results have been compared with the values obtained from a 3-D electromagnetic modeling. A specific chart has been introduced to predict the electrical performance of new MIM capacitor designs. Index Terms-High-frequency measurement, merit factor, metal-insulator-metal (MIM) capacitor, SiN dielectric, quality factor, thru reflect line (TRL), vector network analyzer (VNA).

show abstract

High-density MIM capacitors using AlTaO_x dielectrics

Cited by 24 publications

References 14 publications

Bias-Temperature Instability on Fully Silicided-Germanided Gates/High-k Al[sub 2]O[sub 3] CMOSFETs

Bias-Temperature Instability on Fully Silicided-Germanided Gates/High-k Al[sub 2]O[sub 3] CMOSFETs

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Impact of Design on High-Frequency Performance of Advanced MIM Capacitors Using Si$_{3}$N$_{4}$ Dielectric Layers

Contact Info

Product

Resources

About

High-density MIM capacitors using AlTaOx dielectrics

Cited by 24 publications

References 14 publications

Bias-Temperature Instability on Fully Silicided-Germanided Gates/High-k Al[sub 2]O[sub 3] CMOSFETs

Bias-Temperature Instability on Fully Silicided-Germanided Gates/High-k Al[sub 2]O[sub 3] CMOSFETs

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Impact of Design on High-Frequency Performance of Advanced MIM Capacitors Using Si$_{3}$N$_{4}$ Dielectric Layers

Contact Info

Product

Resources

About

High-density MIM capacitors using AlTaO_x dielectrics