High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

Shen, L.; Jiao, Yuqing; Yao, Weiming; Cao, Zizheng; Engelen, van Jp Jorn; Roelkens, G.; Smit, Meint Meint; Tol, van der Jjgm Jos

doi:10.1364/oe.24.008290

Cited by 52 publications

(55 citation statements)

References 24 publications

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“…Now, LNOI offers a similar optical integration density, which makes the development of photodetectors for LNOI waveguides attractive. This means that many of the well‐established heterogeneous integration fabrication capabilities of III‐V photodetectors on silicon based platforms should be transferable to LNOI waveguides . Such heterogonous photodetectors are very attractive as they can have high bandwidths, such as the recent demonstration of 65 GHz bandwidth high‐power photodetectors .…”

Section: Photonic Building Blocks In Lnoimentioning

confidence: 99%

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

Boes

Corcoran

Chang

et al. 2018

Laser & Photonics Reviews

542

290

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Lithium niobate on insulator (LNOI) technology is revolutionizing the lithium niobate industry, enabling higher performance, lower cost and entirely new devices and applications. The availability of LNOI wafers has sparked significant interest in the platform for integrated optical applications, as LNOI offers the attractive material properties of lithium niobate, while also offering the stronger optical confinement and a high optical element integration density that has driven the success of more mature silicon and silicon nitride (SiN) photonics platforms. Due to some similarities between LNOI and SiN, established techniques and standards can readily be adapted to the LNOI platform including a significant array of interface approaches, device designs and also heterogeneous integration techniques for laser sources and photodetectors. In this contribution, we review the latest developments in this platform, examine where further development is necessary to achieve more functionalities in LNOI integrated optical circuits and make a few suggestions of interesting applications that could be realized in this platform.

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Section: Photonic Building Blocks In Lnoimentioning

confidence: 99%

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

Boes

Corcoran

Chang

et al. 2018

Laser & Photonics Reviews

542

290

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“…It is therefore essential to design the device in a platform that can achieve a high overlap of this thin layer with the optical mode. The IMOS platform also allows for the double-sided processing that is needed to create the structure proposed below [11]. Since IMOS aims for integration of photonics with advanced CMOS electronics, we take the available voltage swing to be 1.5 V.…”

Section: Eam Operation and Designmentioning

confidence: 99%

“…Using an impact ionization model [19] that includes the dead space effect [20] we estimate the breakdown voltage due to avalanche current to be −8 V. The band-to-band tunneling current for the proposed modulator is predicted to be well below 3 mA [12]. In the past we have found that currents higher than 3 mA caused thermal damage to a uni-traveling-wave photodetector (UTC PD, described in [11]). As the modulator proposed here will have a surface area larger than that of the UTC PD, we can assume that no thermal damage will occur.…”

Section: A Electron Density Profile From Semiconductor Simulationmentioning

confidence: 99%

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Engelen

Shen

Roelkens

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policyIf you believe that this document breaches copyright please contact us at:openaccess@tue.nl providing details and we will investigate your claim. Abstract-We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electronconcentration dependent absorption of highly-doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gbit/s and a power consumption of 53 fJ/bit. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

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“…3(a)) [8]. By using electrons with a high drift velocity as the only active carrier, the transit-time constant of the UTC-PD is as low as a few picoseconds.…”

Section: Utc-detectormentioning

confidence: 99%

Photonic Integration on an InP-Membrane

Tol¹,

Jiao²,

Shen³

et al. 2016

Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF)

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Adding photonic functions to silicon electronics has become an important research theme in the last decade. Here we present an approach based on heterogeneously integrating an indium phosphide based membrane on silicon. Within this membrane we realized a range of photonic functions with competitive performances: lasers, fast detectors, waveguides, filters, couplers, modulators etc. This contribution describes the technologies and the results.

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High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

Cited by 52 publications

References 24 publications

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Photonic Integration on an InP-Membrane

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