Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still are several orders of magnitude more expensive than their microelectronic counterparts, which has restricted their application to a few niche markets.

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Abstract:We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the Cband and O-band.

Abstract:A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 µm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon. Tol, H. Ambrosius, G. Roelkens, and M. Smit, "Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices," Opt. Mater. Express 5(2), 393-398 (2015). 24. A. Higuera-Rodriguez, V. Dolores-Calzadilla, Y. Jiao, E. J. Geluk, D. Heiss, and M. K. Smit, "Realization of efficient metal grating couplers for membrane-based integrated photonics," Opt. Lett. 40(12), 2755Lett. 40(12), -2757Lett. 40(12), (2015.

Photonic integration in a micrometer-thick indium phosphide (InP) membrane on silicon (IMOS) offers intrinsic and high-performance optoelectronic functions together with high-index-contrast nanophotonic circuitries. Recently demonstrated devices have shown competitive performances, including high sidemode-suppression ratio (SMSR) lasers, ultrafast photodiodes, and significant improvement in critical dimensions. Applications of the IMOS devices and circuits in optical wireless, quantum photonics, and optical cross-connects have proven their performances and high potential.