High-Bandwidth Combinational Rogowski Coil for SiC MOSFET Power Module

On performance evaluation of high‐power, high‐bandwidth current measurement technologies for SiC switching devices

“…Discrete SiC power MOSFETs are typically rated for currents of 5 A to 100 A [5][6][7][8][9]. Even at high voltage and current levels, the switching speed of SiC power MOSFETs reaches 10 kA∕μs and beyond [10][11][12], and more than 50 kV∕μs [5,[13][14][15]]. This highlights one major challenge in characterizing and operating SiC power MOSFETs, that is to accurately measure switched currents at both high amplitudes and fast transition speeds.…”

“…As a result of these issues, the research community has moved towards custom current sensors. These custom designs employ different measurement principles and achieve high measurement bandwidth at varying maximum measured currents [10][11][12][16][17][18]. While this work focuses on four particular commercially available current sensors, its methodology can be likewise applied to custom current sensors.…”

“…The first characterization step is based on smallsignal analysis, while the second step contains a large-signal analysis. More specifically, the proposed method enhances the small-signal frequency-domain analysis by means of a vector network analyser (VNA) that is frequently seen in the literature [11,12,17,[24][25][26][27], by enabling a large-signal time-and frequency-domain analysis in addition. Moreover, the proposed evaluation method serves the characterization of sensor insertion effects on the measured current.…”

Examination of proper impurity doping and annealing conditions for solution processed Ga2O3 thin films

“…1) Silicon (Si), the current mainstream semiconductor, can be easily mass-produced, and it currently accounts for 90% of the semiconductor market. However, since its physical properties complicate efforts to increase the efficiency of Si semiconductor devices, research is attempting to fabricate semiconductor devices from new semiconductor materials, such as silicon carbide (SiC) [2][3][4][5] and gallium nitride (GaN), [6][7][8][9] which are wide bandgap materials providing excellent physical properties. Gallium oxide (Ga 2 O 3 ) is a wide bandgap semiconductor material that has attracted particular attention in recent years.…”

A LiNbO3 Integrated Optics Sensor for Measurement of Pulsed Current

“…A traditional current transformer (CT) is not adequate because of saturation in a large current [2]. Due to the absence of a magnetic core, a Rogowski coil has the advantages of a large measurement range, wide bandwidth, and excellent transient response, which results in it being an optimal choice for measuring the fast large pulsed current [3][4][5][6][7][8]. However, as the measured current is proportional to the derivative of the magnetic flux, an integrator is required to retrieve the pulsed current waveform, and the direct current (DC) component could not be detected.…”