On performance evaluation of high‐power, high‐bandwidth current measurement technologies for SiC switching devices
Daniel A. Philipps,
Dimosthenis Peftitsis
Abstract:Silicon carbide (SiC) power metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) switch at an unprecedented speed, even at high currents. For accurate dynamic characterization, current sensors must measure high currents at a high bandwidth. Moreover, at high switching speeds, parasitic impedances in the commutation loop become critical. To ensure high‐accuracy measurements, the current sensor insertion impedance must be minimal. Here, a two‐step current sensor evaluation method is proposed. This method… Show more
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