Abstract:We investigated the preparation of Ga2O3 thin films using a wet-process and the Sn-doping conditions to improve resistivity. Undoped and Sn-doped single layer Ga2O3 thin films were prepared by changing the solution concentration, the annealing time, the temperature rise rate, and the rotational speed during deposition. As a result, they were deposited uniformly with good crystallinity and transmittance and relatively small surface roughness. To improve the resistivity by another Sn-doping method, we prepared b… Show more
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