Hierarchical nanostructured semiconductor porous materials for gas sensors

Мошников, В. А.; Gracheva, I. E.; Kuznezov, Vladimir V.; Maximov, A. I.; Karpova, S. S.; Пономарева, А. А.

doi:10.1016/j.jnoncrysol.2010.06.030

Cited by 91 publications

(26 citation statements)

References 9 publications

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“…Using impedance spectroscopy, we performed studies on the electrical properties of the nanomaterials based on porous silicon with the embedded metal oxide nanoparticles [17][18][19].…”

Section: Methodsmentioning

confidence: 99%

Porous silicon with embedded metal oxides for gas sensing applications

Мошников¹,

Gracheva²,

Lenshin³

et al. 2012

Journal of Non-Crystalline Solids

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“…Using impedance spectroscopy, we performed studies on the electrical properties of the nanomaterials based on porous silicon with the embedded metal oxide nanoparticles [17][18][19].…”

Section: Methodsmentioning

confidence: 99%

Porous silicon with embedded metal oxides for gas sensing applications

Мошников¹,

Gracheva²,

Lenshin³

et al. 2012

Journal of Non-Crystalline Solids

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“…В качестве третьего типа зародышевого слоя исполь-зовались нанокомпозиты ZnO−SiO 2 , полученные золь-гель технологией [15][16][17][18][19][20]. Прекурсоры, хлорид цинка ZnСl 2 и тетраэтоксисилан (ТЭОС) Si(OC 2 H 5 ) 4 , рас-творяли в изопропиловом спирте.…”

Section: экспериментunclassified

Получение Гетероструктурных Оксидных Композиций Для Перспективных Солнечных Элементов Нового Поколения

Bobkov¹,

Lashkova²,

Maksimov³

et al. 2017

Физика И Техника Полупроводников

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Рассматриваются перспективы создания солнечных элементов на основе оксидов металлов с объемным гетеропереходом, при этом ZnO был сформирован методом гидротермального синтеза. Представлены результаты синтеза наностержней оксида цинка на различных затравочных слоях. Отмечена значительная роль операции формирования зародышевого слоя. Показана возможность управления структурой массивов наностержней посредством использования поверхностно-активного вещества. Полученные ограненные наностержни перспективны для получения солнечных элементов нового поколения. DOI: 10.21883/FTP.2017.01.8356

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“…Therefore, the attention of researchers to films and film structures A 3 B 5 , A 2 B 6 compounds as devoid of such defects quite justified. Binary compounds and their solid solutions show themselves as promising materials for control of gas media [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Using the Semiconductors Materials of InSb-ZnTe System in Sensors for Gas Control

Shubenkova

2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. The samples of thin film semiconductor compounds InSb, ZnTe and solid solutions based on them were obtained by vapor deposition of components on a dielectric substrate in a vacuum, followed by annealing and their surface properties in CO, O 2 and NH 3 gas atmospheres were investigated. Identification of the samples was carried out by X-ray diffraction techniques. In the temperature range 253 ÷ 403 K and a pressure range of 1÷12 Pa the gas adsorption was measured by piezoelectric microbalance technique. In order to establish the basic regularities of processes flowing on samples surface in addition to the electrophisical were used Infrared and Raman spectroscopic measurements. The resulting addiction "surface property -composition" is extreme and have allowed to determine solid solution InSb 0,95 -ZnTe 0,05 as the most sensitive to the presence of ammonia, selective and this sample exhibits a negligible oxidation of surface.

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Hierarchical nanostructured semiconductor porous materials for gas sensors

Cited by 91 publications

References 9 publications

Porous silicon with embedded metal oxides for gas sensing applications

Porous silicon with embedded metal oxides for gas sensing applications

Получение Гетероструктурных Оксидных Композиций Для Перспективных Солнечных Элементов Нового Поколения

Using the Semiconductors Materials of InSb-ZnTe System in Sensors for Gas Control

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