Hf1−xSixOy dielectric films deposited by UV-photo-induced chemical vapour deposition (UV-CVD)

Liu, M.; Zhu, Liqiang; He, Gang; Wang, Z.M.; Wu, Jianxin; Zhang, J.-Y.; Liaw, Irving I.; Fang, Q.; Boyd, Ian W.

doi:10.1016/j.apsusc.2007.02.150

Cited by 19 publications

(9 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Overall, they can be categorized into two major approaches based on the reaction mechanism during the preparation: CVD and PVD-based process. CVD-based approaches mainly include metalorganic chemical vapor deposition (MOCVD) [70,71], plasma-enhanced chemical vapor deposition (PECVD) [72,73], atomic-layer chemical vapor deposition (ALCVD) [74][75][76][77][78][79], and photo-assisted CVD synthesis [80][81][82][83][84]. These growth methods provide more flexible synthesis process and an alternative to achieve lower cost.…”

Section: Methods To Deposit High-k Gate Dielectricsmentioning

confidence: 99%

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Zhu

Sun

et al. 2011

Progress in Materials Science

134

View full text Add to dashboard Cite

Section: Methods To Deposit High-k Gate Dielectricsmentioning

confidence: 99%

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Zhu

Sun

et al. 2011

Progress in Materials Science

134

View full text Add to dashboard Cite

“…The layers were grown on B-doped Si substrates with a resistivity of 15 cm and (100) orientation. The substrates were cleaned in a diluted hydrofluoric solution (10%) to remove the native oxide.…”

Section: Methodsmentioning

confidence: 99%

“…To obtain the information about chemical composition of the films versus R Si , ATR spectra were studied for the same samples and they are presented in figure 8. Unfortunately, only a few data about vibration bands for Si-rich HfO 2 layers are available up to now and most of them were obtained for thick films prepared by vapor-based techniques [15,31]. In such a case, the infrared absorption band corresponding to the Hf-Si-O stretching vibration was observed between 888 and 1004 cm −1 .…”

Section: The Effect Of R Si On the Structural Properties Of The Filmsmentioning

confidence: 99%

See 1 more Smart Citation

High-kHf-based layers grown by RF magnetron sputtering

et al. 2010

View full text Add to dashboard Cite

Structural and chemical properties of Hf-based layers fabricated by RF magnetron sputtering were studied by means of x-ray diffraction, transmission electron microscopy and attenuated total reflection infrared spectroscopy versus the deposition parameters and annealing treatment. The deposition and post-deposition conditions allow us to control the temperature of the amorphous-crystalline phase transition of HfO(2)-based layers. It was found that silicon incorporation in an HfO(2) matrix plays the main role in the structural stability of the layers. It allows us not only to decrease the thickness of the film/substrate interfacial layer to 1 nm, but also to conserve the amorphous structure of the layers after an annealing treatment up to 900-1000 degrees C.

show abstract

“…Details of the UV-CVD-derived Hf 1−x Si x O y gate dielectrics have been described elsewhere. 17 The chemical bonding states and band alignments of the targeted Hf 1−x Si x O y films on Si have been investigated by ex-situ XPS ͑ESCALAB MK2͒ system, equipped with an Mg K␣ radiation source ͑1253.6 eV͒ and hemispherical analyzer with a pass energy of 20 eV. The collected data were corrected for charging effect-induced peak shifts using the binding energy ͑BE͒ of adventitious carbon C 1s peak ͑284.6 eV͒.…”

Section: Methodsmentioning

confidence: 99%

Composition dependence of electronic structure and optical properties of Hf1−xSixOy gate dielectrics

Zhang

Guo

et al. 2008

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Composition-dependent electronic structure and optical properties of Hf 1−x Si x O y ͑0.1Յ x Յ 0.6͒ gate dielectrics on Si at 450°C grown by UV-photo-induced chemical vapor deposition ͑UV-CVD͒ have been investigated via x-ray photoemission spectroscopy and spectroscopy ellipsometry ͑SE͒. By means of the chemical shifts in the Hf 4f, Si 2p, and O 1s spectra, the Hf-O-Si bondings in the as-deposited films have been confirmed. Analyses of composition-dependent band alignment of Hf 1−x Si x O y / Si gate stacks have shown that the valence band ͑VB͒ offset ͑⌬E v ͒ demonstrates little change; however, the values of conduction band offset ͑⌬E c ͒ increase with the increase in the silicon atomic composition, resulting from the increase in the separation between oxygen 2p orbital VB state and antibonding d states intermixed of Hf and Si. Analysis by SE, based on the Tauc-Lorentz model, has indicated that decreases in the optical dielectric constant and increase in band gap have been observed as a function of silicon contents. Changes in the complex dielectric functions and band gap E g related to the silicon concentration in the films are discussed systematically. From the band offset and band gap viewpoint, these results suggest that Hf 1−x Si x O y films provide sufficient tunneling barriers for electrons and holes, making them promising candidates as alternative gate dielectrics.

show abstract

Hf1−xSixOy dielectric films deposited by UV-photo-induced chemical vapour deposition (UV-CVD)

Cited by 19 publications

References 34 publications

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

High-kHf-based layers grown by RF magnetron sputtering

Composition dependence of electronic structure and optical properties of Hf1−xSixOy gate dielectrics

Contact Info

Product

Resources

About