Conference on Lasers and Electro-Optics 2019
DOI: 10.1364/cleo_si.2019.stu4j.6
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Heterogeneous integrated quantum photonic devices with single, deterministically positioned InAs quantum dots

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Cited by 3 publications
(5 citation statements)
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“…Further, even before post‐growth techniques for spatial and spectral quantum dot control are applied, the search and identification, within a large as‐grown population, of individual QDs that offer desirable characteristics will likely remain a crucial aspect of quantum dot device fabrication. Whereas single QD search and identification is already carried out in the various types of quantum dot positioning setups developed for deterministic single QD device fabrication, achieving scalability in QD device fabrication will likely require not only automation, but also high‐throughput spectral and quantum optical (i.e., single‐photon purity, indistinguishability, level of entanglement, etc.) characterization of large numbers of individual dots within a grown ensemble.…”
Section: Discussionmentioning
confidence: 99%
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“…Further, even before post‐growth techniques for spatial and spectral quantum dot control are applied, the search and identification, within a large as‐grown population, of individual QDs that offer desirable characteristics will likely remain a crucial aspect of quantum dot device fabrication. Whereas single QD search and identification is already carried out in the various types of quantum dot positioning setups developed for deterministic single QD device fabrication, achieving scalability in QD device fabrication will likely require not only automation, but also high‐throughput spectral and quantum optical (i.e., single‐photon purity, indistinguishability, level of entanglement, etc.) characterization of large numbers of individual dots within a grown ensemble.…”
Section: Discussionmentioning
confidence: 99%
“…Careful consideration must be paid to design and fabrication of the photonic structure, so that the geometry and the necessary fabrication process minimally affects the as‐grown quantum dot optical properties. In particular, the close proximity of QDs to etched surfaces has been shown to induce significant linewidth broadening, and therefore coherence degradation, of QD transitions . In view of the necessity to adjust QD spectral properties, photonic design must accommodate QD tuning and stabilization methods, such as through mechanical strain and the DC Stark tuning; or, conversely, special consideration must be taken when implementing such tuning techniques against devices produced on a chip, so that photonic performance is minimally affected.…”
Section: Discussionmentioning
confidence: 99%
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“…Furthermore, nanowires with integrated single QDs have also been deterministically integrated in silicon-based photonic waveguides combining pick-and-place and waveguide processing [127] (see figure 5 (c)). Moreover, the deterministic fabrication of hybrid GaAs/Si 3 N 4 waveguide devices with integrated pre-selected QDs (see figure 5 (d)) was recently demonstrated by Schnauber et al in an all-lithography-based approach [128], i.e. without requiring pick-and-place.…”
Section: Hybrid Approachesmentioning
confidence: 96%
“…Since the wafer-bonding method integrates two platforms on a wafer scale, without precise control of the position and frequency of the individual emitters, the actual coupling efficiency and yield remain low. However, recently developed techniques for site-controlled emitters [44,45], in-situ lithography [95,96], and local frequency tuning [46,62,97] may provide possible solutions for these issues. Figure 5(c) shows that the position of the quantum emitters in the bonded wafer is pre-defined by cathode luminescence in scanning electron microscopy, and the device is fabricated by in-situ electron beam lithography technique.…”
Section: Wafer-bondingmentioning
confidence: 99%