Hetero Channel Double Gate MOSFET for Label-free Biosensing Application

Mohanty, Soumya S.; Mishra, Sandip K.; Mohapatra, Meryleen; Mishra, Guru Prasad

doi:10.1007/s12633-021-01573-8

Cited by 5 publications

(4 citation statements)

References 38 publications

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“…One application of ion-sensitive field-effect transistor (ISFET) is biosensing which can be used for sensing biological charge variation in a chemical environment [3]. With further development of technology, novel ISFET devices have been fabricated for various applications [4]. However, there is still significant room to improve the ISFET sensitivity, reliability, and stability.…”

Section: Introductionmentioning

confidence: 99%

Assessing the Effect of Scaling High-Aspect-Ratio ISFET with Physical Model Interface for Nano-Biosensing Application

Dhar

Kumar

García

et al. 2022

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

Assessing the Effect of Scaling High-Aspect-Ratio ISFET with Physical Model Interface for Nano-Biosensing Application

Dhar

Kumar

García

et al. 2022

Solid-State Electronics

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“…DM-SGGS-BTFS is a label-free biosensor that uses the molecular and physical properties of biomolecules to detect and sense them [30,[67][68][69][70]. Kim et al [71] has practically demonstrated the entrapment of streptavidin (size ∼5 nm) inside a cavity.…”

Section: Device Structure and Software Specificationsmentioning

confidence: 99%

Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation

Das,

Rewari,

Kanaujia

et al. 2023

Phys. Scr.

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This paper proposes a novel dielectric modulated step-graded germanium source biotube FET for label-free biosensing applications. Its integrated structure and unique design combine the benefits of the gate stack, germanium source, triple-gate architecture, and a step-graded biotube channel, resulting in superior performance over existing biosensors. A compact two-dimensional analytical model for channel potential, drain current, threshold voltage, and subthreshold swing has been formulated and agrees well with the simulated results. The comprehensive investigation of different device parameters, including doping and bias, offers valuable insights into optimizing the biosensor’s performance. The proposed biosensor exhibits remarkable sensitivity, achieving up to 263 mV and 1495.52 nA for certain biomolecules, which has been validated by a compact analytical model and simulations performed on the SILVACO TCAD simulator. Several parameters are employed to assess the biosensor’s effectiveness: threshold voltage, ION/IOFF ratio, subthreshold swing, off-current, peak trans-conductance, and on-current. Furthermore, the biotube channel design enables lightweight and cost-efficient biosensors, enhancing the biosensor’s practicality. This work also includes an analysis of the effect of temperature on the biosensor’s performance and characteristics, providing insights into practical applications. High sensitivity of the biosensor signifies a significant advancement in biosensing technology, suggesting a wide range of potential applications in biomedical field.

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“…The SiGe-DMTG SON device can be employed as a label-free biosensor to identify biomolecules such as Biotin, Streptavidin, 3-aminopropyltriethoxysilane (APTES), Uricase, and Protein [17,19,23]. The nano-cavity filled with k = 1 is treated as an empty cavity without biomolecules.…”

Section: Structural Description Of the Devicementioning

confidence: 99%

“…So to improve the sensitivity, different DM-based biosensors like accumulation mode FET (AMFET) [11,12], inversion mode MOSFETs [13], Impact Ionization FETs [14,15], HEMT [16][17][18], Tunnel FETs (TFETs) [19][20][21], and the nanowire junction-less MOSFET [22,23] have been investigated for the growth of the semi-conductive material technology.…”

Section: Introductionmentioning

confidence: 99%

Gate electrode stacked source/drain SON trench MOSFET for biosensing application

Mishra,

Mohanty,

Mishra

2023

Phys. Scr.

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This work inspects a dielectrically modulated (DM) stacked source/drain SiGe dual-metal trench gate silicon on nothing (SON) metal–oxide–semiconductor field-effect transistor (SiGe-DMTG SON MOSFET) biosensor to enhance the sensing capability of the device. A nano-cavity is implanted in the either side of gate area for immobilization of biomolecules which can modulate the gate capacitance and dielectric constant of the nanocavity area. Thus the device undergoes a threshold voltage shift which has a great impact on device sensitivity. So SiGe-DMTG SON MOSFET biosensor is proposed to identify the sensing performance of various analytes like Uricase (k=1.54), Streptavidin (k=2.1), Biotin (k=2.63), 3-aminopropyltriethoxysilane (APTES) (k =3.57) and protein (k =8) using DM technique. The electrostatic properties of the neutral biomolecules such as electrostatic potential, electric field, On current, switching ratio, threshold voltage, On current sensitivity, threshold voltage sensitivity, and subthreshold performance of SiGe-DMTG SON MOSFET biosensor have been evaluated using 2D ATLAS device simulator. Further, the parasitic capacitances of the proposed biosensor has been investigated for different biomolecules in the nano-cavity region in order to observe the sensing performance of the device .From the result analysis it has been observed that for protein (k =8) , the proposed SiGe-DMTG SON MOSFET biosensor offers a threshold voltage sensitivity of 0.581 and On current sensitivity of 1.765. Apart from this, protein (k =8) offers a strong threshold voltage shift of 104.8mV with respect to k=1 shows best suited for biosensing application.

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Hetero Channel Double Gate MOSFET for Label-free Biosensing Application

Cited by 5 publications

References 38 publications

Assessing the Effect of Scaling High-Aspect-Ratio ISFET with Physical Model Interface for Nano-Biosensing Application

Assessing the Effect of Scaling High-Aspect-Ratio ISFET with Physical Model Interface for Nano-Biosensing Application

Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation

Gate electrode stacked source/drain SON trench MOSFET for biosensing application

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