Heat treatment effect on magnetic properties of polycrystalline Si1−Mn  semiconductors grown by MBE

Kwon, Dhang; Kim, Han Kyum; Kim, Jong Hwan; Ihm, Young Eon; Kim, Dojin; Kim, Hyojin; Baek, Jong‐Beom; Kim, Chang Soo; Choo, Woong Kil

doi:10.1016/j.jmmm.2004.04.054

Cited by 25 publications

(8 citation statements)

References 18 publications

(15 reference statements)

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“…The Mn 5 Si 2 forms a non-percolative network of randomly oriented grains, which have a strong dark contrast in bright field images in plane view samples (figure 2(c)). These Mn 5 Si 2 nanocolumns were confirmed to be paramagnetic by previous studies [20]. In contrast, below such precipitation there are no identifiable precipitates.…”

Section: Resultssupporting

confidence: 71%

Activation of acceptor levels in Mn implanted Si by pulsed laser annealing

Bürger

Shalimov

et al. 2018

J. Phys. D: Appl. Phys.

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In this paper, we report the magnetic and electrical properties of Mn implanted nearly intrinsic Si wafers after subsecond thermal treatment. Activation of acceptors is realized in pulsed laser annealing (PLA) films with a free hole concentration of 6.29 × 1020 cm−3 while the sample annealed by rapid thermal annealing (RTA) shows n-type conductivity with a much smaller free electron concentration in the order of 1015 cm−3. Ferromagnetism is probed for all films by a SQUID magnetometer at low temperatures. The formation of ferromagnetic MnSi1.7 nanoparticles which was proven in RTA films can be excluded in Mn implanted Si annealed by PLA.

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Section: Resultssupporting

confidence: 71%

Activation of acceptor levels in Mn implanted Si by pulsed laser annealing

Bürger

Shalimov

et al. 2018

J. Phys. D: Appl. Phys.

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“…Especially interesting DMS are on basis of elementary silicon semiconductor because of their compatibility with the most widespread silicon technology. Numerous attempts of synthesis ferromagnetic DMS on basis of silicon, doped by 3d -impurities, were undertaken [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] . The problem of synthesis such DMS is even more difficult than in case of III-V compounds because of the close to equilibrium solubility of middle 3d -iron group elements impurities in Si is about 10 16 cm -3 on two order more low, these impurities mainly occupy position of interstitials and show donor properties 23,24 .…”

mentioning

confidence: 99%

High-temperature diamond-like Si-based ferromagnet with self-organized superlattice distribution of Mn impurity

Demidov¹,

Pavlova²,

Bobrov³

2013

Jetp Lett.

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Crystal structure of Si:Mn diluted magnetic semiconductor with Curie temperature 500К, deposited from laser plasma on GaAs(100) substrates, was investigated by high-resolution transmission electronic microscopy and diffraction. This laser technology allows to reach of solid solution of 15%Mn in silicon with high electrical and full magnetic activity, conservation of diamondlike crystal structure and epitaxy growth of Si:Mn. The self-organized formation of superlattice structures takes place with period equal to trebled distance between nearest atomic layers (110) and interval between layers (110) which are doped by Mn atoms and oriented along direction of growth of 50 nm Si:Mn film.To necessity to fill a gap between microelectronics and magnetic electronics J. K. Furdyna 1 had paid attention in 1988. The first ferromagnetic so-called diluted magnetic semiconductors (DMS) on basis of compounds II-VI 2,3 and III-V 4 were synthesized in 90s of last century. Now there are a lot of publications devoted to epitaxy layers of DMS Ga 1-x Mn x As with atomic fraction of Mn impurity x≈0.05 and perfect crystal structure grown up at low temperatures ≈250°С by molecular beam epitaxy (MBE). However maximum attained Curie point of this ferromagnetic Ga 1-x Mn x As 170К is below room temperature 5. Especially interesting DMS are on basis of elementary silicon semiconductor because of their compatibility with the most widespread silicon technology. Numerous attempts of synthesis ferromagnetic DMS on basis of silicon, doped by 3d -impurities, were undertaken [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] . The problem of synthesis such DMS is even more difficult than in case of III-V compounds because of the close to equilibrium solubility of middle 3d -iron group elements impurities in Si is about 10 16 cm -3 on two order more low, these impurities mainly occupy position of interstitials and show donor properties 23,24 . Though, according to regularities in recharge levels of such impurities in diamond like semiconductors, the most preferable analogue of manganese in compounds III-V in silicon is iron 18,25 , the greatest successes have been reached by doping of Si also by manganese. Encouraging preconditions have appeared still in 1993 6 . The ferromagnetic behavior up to 320К according to field dependence of magnetization was observed for periodic structure of 20 nm layers of Si and Mn fabricated by electron beam vacuum evaporation (EBVE). The layers of DMS Si:Mn with about 5% Mn and T c =70К, according to abnormal Hall effect (AHE), were produced on silicon substrates (Si:Mn/Si) at 300°С by MBE technology as well as in case of DMS on basis of compounds III-V 7 . The single crystal layers of Si:5%Mn/Si were made by EBVE method 9,10 with ferromagnetism on magnetization data up to 400К. However DMS's rather high resistivity (0.25-2.5) Ohm·cm with semiconductor dependence ρ=ρ 0 exp(E a /kT) means absence of degeneration of semiconductor. The degeneration is necessary for realization of the most probable in DMS fe...

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“…X-ray diffraction analysis allows for checking the presence and phase transformations of processed Si:Mn, in particular of the reported magnetically ordered [8] phase (Mn 4 Si 7 ). The presence of Mn 4 Si 7 determines the ferromagnetic properties of Si:Mn at relatively low temperatures only (T C ≈ 47 K for Mn 4 Si 7 [11]). However, T C for the Si:Mn samples corresponding to these investigated in this study has been reported to be above 400 K [9,10].…”

Section: Resultsmentioning

confidence: 99%