Effect of processing on microstructure of Si:Mn

Bąk‐Misiuk, J.; Misiuk, A.; Romanowski, P.; Barcz, A.; Jakieła, R.; Dynowska, E.; Domagała, J. Z.; Caliebe, W.

doi:10.1016/j.mseb.2008.06.034

Cited by 8 publications

(1 citation statement)

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“…Spin-glass-like behavior has been observed in GaAs:Mn and Ge:Mn systems containing Mn-rich clusters [15,16,17]. Despite numerous publications on the structural and magnetic properties of MnSi 1.7 embedded in Si [5,6,7,8,18], information of their dynamic properties is lacking. In this paper, we will present the static and dynamic magnetic properties of MnSi 1.7 nanoparticles.…”

Section: Introductionmentioning

confidence: 99%

MnSi1.7nanoparticles embedded in Si: Superparamagnetism with collective behavior

et al. 2009

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The doping of Mn in Si is attracting research attentions due to the possibility to fabricate Si-based diluted magnetic semiconductors. However, the low solubility of Mn in Si favors the precipitation of Mn ions even at nonequilibrium growth conditions. MnSi 1.7 nanoparticles are the common precipitates, which show exotic magnetic properties in comparison with the MnSi 1.7 bulk phase. In this paper we present the static and dynamic magnetic properties of MnSi 1.7 nanoparticles. Using the Preisach model, we derive the magnetic parameters, such as the magnetization of individual particles, the distribution of coercive fields and the interparticle interaction field. Time-dependent magnetization measurements reveal aging and memory effects, qualitatively similar to those seen in spin glasses.

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Section: Introductionmentioning

confidence: 99%

MnSi1.7nanoparticles embedded in Si: Superparamagnetism with collective behavior

et al. 2009

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Si Based Magnetic Semiconductors

DiTusa

2016

Handbook of Spintronics

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Si-Based Magnetic Semiconductors

DiTusa

2015

Handbook of Spintronics

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The efforts over the past decade to identify and characterize magnetic semiconducting systems that would be compatible with present-day silicon technologies are reviewed. Investigations that have explored transition metal doping of the group IV semiconductors silicon and germanium are discussed along with intermetallic compounds such as silicides and germanides that may play the role of a magnetic semiconducting source of polarized electrons. Thin films and nanostructures of these materials have been grown by a number of synthesis techniques, and the resulting structural properties, including the important issue of homogeneity of dopants, are critically surveyed. The resulting magnetic and carrier transport properties are also reviewed. List of Abbreviations

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Effect of processing on microstructure of Si:Mn

Cited by 8 publications

References 12 publications

MnSi1.7nanoparticles embedded in Si: Superparamagnetism with collective behavior

MnSi1.7nanoparticles embedded in Si: Superparamagnetism with collective behavior

Si Based Magnetic Semiconductors

Si-Based Magnetic Semiconductors

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