2018
DOI: 10.1088/1361-6463/aab5a6
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Activation of acceptor levels in Mn implanted Si by pulsed laser annealing

Abstract: In this paper, we report the magnetic and electrical properties of Mn implanted nearly intrinsic Si wafers after subsecond thermal treatment. Activation of acceptors is realized in pulsed laser annealing (PLA) films with a free hole concentration of 6.29  ×  1020 cm−3 while the sample annealed by rapid thermal annealing (RTA) shows n-type conductivity with a much smaller free electron concentration in the order of 1015 cm−3. Ferromagnetism is probed for all films by a SQUID magnetometer at low temperatures. Th… Show more

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