Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide

Punchaipetch, Prakaipetch; Pant, G.; Quevedo‐Lopez, Manuel; Zhang, H; El-Bouanani, M.; Kim, M.J; Wallace, Robert M.; Gnade, Bruce E.

doi:10.1016/s0040-6090(02)01306-8

Cited by 32 publications

(14 citation statements)

References 19 publications

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“…Chemical shift of the Si" component changes from 3.9 eV for the SC-2 oxide to 3.3 eV for the sample grown by 30 cycles. The latter agrees with the shiA reported for sputter deposited hafnium silicate [7]. These XPS results clearly show that growth of hafnium silicate is possible by the VALID method at room temperature.…”

Section: Methodssupporting

confidence: 91%

Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors

Xuan

Yasuda

2003

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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Section: Methodssupporting

confidence: 91%

Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors

Xuan

Yasuda

2003

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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“…On the HF-last surface, the peak is shifted even further to lower binding energies, suggesting the presence of silicon in an oxidation state lower than C4 or the formation of hafnium silicide. A binding energy of ¾102 eV is consistent with that reported by Punchaipetch et al 16 for hafnium silicide. Figure 10 shows the effect of growing a 4 nm HfO 2 layer by MOCVD on a substrate at 300°C during growth and the effect of annealing at 700°C following growth.…”

Section: Interfacial Chemistrysupporting

confidence: 91%

Non‐destructive analysis of ultrathin dielectric films

Champaneria¹,

Mack²,

White³

et al. 2003

Surface & Interface Analysis

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Using angle-resolved x-ray photoelectron spectroscopy (ARXPS) it is possible to determine thickness, composition and depth distribution information for ultrathin samples in the region of ∼5-10 nm. With ARXPS determining both quantitative elemental information and chemical state information, it provides chemical state profiles from surface and buried layers non-destructively. This paper illustrates how ARXPS data can provide measurements of overlayer thickness and interface layer thickness for high-k dielectric layers on silicon. Elemental and chemical state depth distribution information is also provided in the form of reconstructed concentration profiles. Further examples are provided where ARXPS has been used to study the influence of surface pretreatment of the silicon substrate prior to deposition of hafnium oxide. It will be shown that the pretreatment determines whether a silicon oxide or silicate is formed.

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“…Fig. 23 shows the HRTEM images of deposited hafnium silicate films formed by reactive sputtering and hafnium silicide films after UV/O 3 oxidation followed by in situ capping with a 30 nm platinum film [152]. During reactive sputtering, interfacial layer formation can be clearly seen in Fig.…”

Section: Hf-based Oxides Gate Dielectricsmentioning

confidence: 99%