Growth of ZnO:Al by atomic layer deposition: Deconvoluting the contribution of hydrogen interstitials and crystallographic texture on the conductivity

Mauit, Ozhet; Caffrey, David; Ainabаyev, Ardak; Kaisha, Aitkazy; Toktarbaiuly, Olzat; Sugurbekov, Yerzhigit; Sugurbekova, Gulnar; Shvets, I. V.; Fleischer, K.

doi:10.1016/j.tsf.2019.137533

Cited by 5 publications

(4 citation statements)

References 39 publications

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“…The sample thickness varied from 50 to 70 nm depending on Al content and sample texture. Details of the growth conditions and film properties are described elsewhere [53]. The use of ALD allows for very low growth temperatures (here 250 • C), while maintaining high conductivity of the TCO layers.…”

Section: Example Ultrathin Nanocrystalline Zinc Oxidementioning

confidence: 99%

“…The use of ALD allows for very low growth temperatures (here 250 • C), while maintaining high conductivity of the TCO layers. Of importance here is that X-ray diffraction (XRD) measurements of these films reveal an amorphisation of the ZnO crystal structure above 6% Al content [53]. Diffraction patterns and all film thicknesses have been measured with a Bruker D8 Discover, using a monochromised Cu-Kα source (Goeble mirror and Ge double bounce monochromator).…”

Section: Example Ultrathin Nanocrystalline Zinc Oxidementioning

confidence: 99%

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Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy

et al. 2020

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The electronic and optical properties of transparent conducting oxides (TCOs) are closely linked to their crystallographic structure on a macroscopic (grain sizes) and microscopic (bond structure) level. With the increasing drive towards using reduced film thicknesses in devices and growing interest in amorphous TCOs such as n-type InGaZnO 4 (IGZO), ZnSnO 3 (ZTO), p-type Cu x CrO 2 , or ZnRh 2 O 4 , the task of gaining in-depth knowledge on their crystal structure by conventional X-ray diffraction-based measurements are becoming increasingly difficult. We demonstrate the use of a focal shift based background subtraction technique for Raman spectroscopy specifically developed for the case of transparent thin films on amorphous substrates. Using this technique we demonstrate, for a variety of TCOs CuO, a-ZTO, ZnO:Al), how changes in local vibrational modes reflect changes in the composition of the TCO and consequently their electronic properties.

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Section: Example Ultrathin Nanocrystalline Zinc Oxidementioning

confidence: 99%

Section: Example Ultrathin Nanocrystalline Zinc Oxidementioning

confidence: 99%

Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy

et al. 2020

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“…P-type Transparent Conductive Oxides (TCOs) possess wide-ranging potential in various technological applications, including solar cells 1 , organic light-emitting diodes 2 , transparent thin-film transistors 3 , and more 4 . However, current p-type TCOs do not exhibit the necessary combination of electrical conductivity and transparency required for widespread industrial use, unlike their n-type counterparts 4 – 7 . To meet the demands of photovoltaics and water-splitting technologies, there is a crucial need for high-performance p-type TCOs capable of facilitating effective hole collection and enabling the fabrication of efficient transparent p-n junctions 8 , 9 .…”

Section: Introductionmentioning

confidence: 99%

High-performance p-type V2O3 films by spray pyrolysis for transparent conducting oxide applications

Ainabayev,

Walls,

Mullarkey

et al. 2024

Sci Rep

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High-quality epitaxial p-type V2O3 thin films have been synthesized by spray pyrolysis. The films exhibited excellent electrical performance, with measurable mobility and high carrier concentration. The conductivity of the films varied between 115 and 1079 Scm−1 while the optical transparency of the films ranged from 32 to 65% in the visible region. The observed limitations in thinner films’ mobility were attributed to the nanosized granular structure and the presence of two preferred growth orientations. The 60 nm thick V2O3 film demonstrated a highly competitive transparency-conductivity figure of merit compared to the state-of-the-art.

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“…There is significant interest in transparent conducting oxide (TCO) thin films for optoelectronic devices, including thin film solar cells, OLEDs, flat panel displays, and antifrost window coatings. − TCOs are semiconductors with a wide bandgap that simultaneously exhibit high conductivity and transparency in the visible range ( E g > 3 eV). Recently, there has been increased attention to amorphous oxide TCO materials, which offer the advantage of low synthesis temperatures and higher mechanical flexibility while maintaining high electrical quality. ,, In recent decades, indium tin oxide and indium gallium zinc oxide have been extensively studied.…”

Section: Introductionmentioning

confidence: 99%

Examining the Desirable Properties of ZnSnO_y by Annealing Treatment with a Real-Time Observation of Resistivity

Kaisha,

Caffrey,

Ainabayev

et al. 2024

ACS Omega

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In this report, 38 nm-thick amorphous zinc−tin oxide (a-ZTO) films were deposited by radio frequency magnetron cosputtering. a-ZTO films were annealed by in situ monitoring of the sheet resistance improvements during the annealing process. A sharp drop in the slope of the sheet resistance curve was observed. The activation energies for the sheet resistance slope were calculated. The activation energy of the reaction for a sharp drop in the slope is much higher than the activation energy for the rest of the slope. Based on the activation energy values, six annealing temperatures were selected to saturate the highest conductivity at lower annealing temperatures and to identify the effects associated with annealing time. We found a direct correlation between annealing temperatures and the duration of the annealing treatment. a-ZTO films with a high conductivity of 320 S/cm were achieved by annealing at a temperature of 220 °C. It is noteworthy that the annealing temperature of 220 °C has clearly replaced the temperature of 300 °C. An irreversible decrease in resistivity was observed for all films. The conduction mechanism of films before and after annealing was determined. We confirm that all films individually exhibit semiconducting and metallic behaviors in the conduction mechanism before and after the lowest resistivity saturation.

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Growth of ZnO:Al by atomic layer deposition: Deconvoluting the contribution of hydrogen interstitials and crystallographic texture on the conductivity

Cited by 5 publications

References 39 publications

Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy

Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy

High-performance p-type V2O3 films by spray pyrolysis for transparent conducting oxide applications

Examining the Desirable Properties of ZnSnO_y by Annealing Treatment with a Real-Time Observation of Resistivity

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Growth of ZnO:Al by atomic layer deposition: Deconvoluting the contribution of hydrogen interstitials and crystallographic texture on the conductivity

Cited by 5 publications

References 39 publications

Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy

Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy

High-performance p-type V2O3 films by spray pyrolysis for transparent conducting oxide applications

Examining the Desirable Properties of ZnSnOy by Annealing Treatment with a Real-Time Observation of Resistivity

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Product

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Examining the Desirable Properties of ZnSnO_y by Annealing Treatment with a Real-Time Observation of Resistivity