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Additive manufacturing is being increasingly used in the fabrication of Ti-6Al-4V parts to combine excellent mechanical properties and biocompatibility with high precision. Unfortunately, due to the build-up of thermal residual stresses and the formation of martensitic structure across a wide range of typical processing conditions, it is generally necessary to use a post-thermal treatment to achieve superior mechanical performance. This investigation aims to obtain a deeper understanding of the micro/nanostructural evolution (a 0 martensite phase decomposition), accounting for the kinetics of phase transformation during the heat treatment of 3D-printed Ti-6Al-4V alloy. As the mechanism of phase transformation and stress relaxation is still ambiguous, in this study the changes in crystal lattice, phase, composition and lattice strain were investigated up to 1000°C using both in situ high temperature X-ray diffraction (XRD) and transmission electron microscopy (TEM). Based on the result a mechanism of phase transformation is proposed, via the accommodation/substitution of Al, V and Ti atoms in the crystal lattice. The proposed mechanism is supported based on elemental concentration changes during heat treatment, in combination with changes in crystal structure observed using the high temperature XRD and TEM measurements. This study provides a deeper understanding on the mechanism of phase transformation through martensitic decomposition, as well as a deeper understanding of the influence of post-thermal treatment conditions on the alloy's crystal structure.
. (2016). Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching. RSC Advances: an international journal to further the chemical sciences, 6 30468-30473.Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching
AbstractWe present a low-cost fabrication procedure for the production of nanoscale periodic GaAs nanopillar arrays, using the nanosphere lithography technique as a templating mechanism and the electrochemical metal assisted etch process (MacEtch). The room-temperature photoluminescence (PL) and Raman spectroscopic properties of the fabricated pillars are detailed, as are the structural properties (scanning electron microscopy) and fabrication process. From our PL measurements, we observe a singular GaAs emission at 1.43 eV with no indications of any blue or green emissions, but with a slight redshift due to porosity induced by the MacEtch process and characteristic of porous GaAs (p-GaAs). This is further confirmed via Raman spectroscopy, where additionally we observe the formation of an external cladding of elemental As around our nanopillar features. The optical emission is enhanced by an order magnitude (~300%) for our nanopillar sample relative to the planar unprocessed GaAs reference. We present a low-cost fabrication procedure for the production of nanoscale periodic GaAs nanopillar arrays, using the nanosphere lithography technique as a templating mechanism and the electrochemical metal assisted etch process (MacEtch). The room-temperature photoluminescence (PL) and Raman spectroscopic properties of the fabricated pillars are detailed, as are the structural properties (scanning electron microscopy) and fabrication process. From our PL measurements, we observe a singular GaAs emission at 1.43 eV with no indications of any blue or green emissions, but with a slight redshift due to porosity induced by the MacEtch process and characteristic of porous GaAs (p-GaAs). This is further confirmed via Raman spectroscopy, where additionally we observe the formation of an external cladding of elemental As around our nanopillar features. The optical emission is enhanced by an order magnitude ($300%) for our nanopillar sample relative to the planar unprocessed GaAs reference.
In this report, reactive and nonreactive sputtering of amorphous ZnSnO y (a-ZnSnO y ) was investigated, and extensive composition maps have been measured by X-ray photoelectron spectroscopy. The comprehensive analysis of the ((ZnO) x (SnO 2 ) 1−x ) composition reveals that the best Zn/Sn ratio for high conductivity of the material can vary depending on the deposition technique utilized. Best conductivities of 225 S/cm were found to occur at x = 0.32 for reactive sputtering of a Sn target and x = 0.27 for nonreactive sputtering of a SnO 2 target. These values correspond to unstable polymorphs of a-ZnSnO y , ZnSn 2 O 5 , and ZnSn 3 O 7 . Distinct local bonding arrangements have been confirmed by Raman spectroscopy.
Silver thin films are well known as the most sensitive material for surface plasmon resonance (SPR) based analysis. However, the use of silver for this purpose is limited by three main issues, namely poor adhesion to plastic substrates, chemical instability in both air and aqueous environments and hence the difficulty in functionalizing the silver coated substrate for immobilizing biomolecular ligands by conventional liquid phase methods. In this work, we have successfully addressed these problems using gas-phase coating processes. We demonstrate highly adherent sputter-deposited silver coatings on low cost polymer substrates using a sputter-deposited thin gold adhesion layer. The problems of chemical instability and functionalisation have been addressed by using the gas phase process of plasma enhanced chemical vapour deposition (PECVD) to deposit thin films with a base SiO(x)C(y)H(z) layer (using tetraethyl orthosilicate precursor) functionalised with carboxylic acid (from sequential deposition with acrylic acid precursor). The resultant coating serves as a protective layer against degradation of the optical properties of silver under long term storage and use in ambient conditions. The reactive carboxyl functionality is used for the covalent immobilization of biomolecules. The successful stabilisation and functionalization of silver films on plastic sensor chips is demonstrated by mouse IgG immunoassays. The expected superior performance of the silver thin films over gold thin films for SPR analysis is demonstrated.
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