2001
DOI: 10.1016/s0022-0248(01)00787-4
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Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source

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Cited by 11 publications
(5 citation statements)
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“…The active region of the cavity was grown by molecular beam epitaxy on high quality GaAs n + -substrates following the deposition of a 20 nm ZnSe buffer layer. A sacrificial layer of MgS (10 nm) was grown [16], then the active region, 5 ZnSe (8 nm)/Zn 0.9 Cd 0.1 Se (8 nm) QWs with ZnSe spacers' (∼53 nm) top and bottom such that the thickness of the active layer was equal to one optical wavelength at the emission of the well. Rotation of the sample was stopped during the growth of the top ZnSe spacer so as to allow translational tuning of ∼10 meV mm −1 of the completed MC.…”
Section: Sample Fabricationmentioning
confidence: 99%
“…The active region of the cavity was grown by molecular beam epitaxy on high quality GaAs n + -substrates following the deposition of a 20 nm ZnSe buffer layer. A sacrificial layer of MgS (10 nm) was grown [16], then the active region, 5 ZnSe (8 nm)/Zn 0.9 Cd 0.1 Se (8 nm) QWs with ZnSe spacers' (∼53 nm) top and bottom such that the thickness of the active layer was equal to one optical wavelength at the emission of the well. Rotation of the sample was stopped during the growth of the top ZnSe spacer so as to allow translational tuning of ∼10 meV mm −1 of the completed MC.…”
Section: Sample Fabricationmentioning
confidence: 99%
“…Following the oxide desorption at 580 1C, the samples are cooled to the growth temperature of between 240 1C and 270 1C, under a Zn flux. Growth is initiated on a thin ZnSe buffer layer which not only protects the substrate from S contamination but also provides optimum conditions for the growth of the metastable MgS sacrificial layer [7]. The crystal quality of the structures was monitored throughout the growth by reflection high-energy electron diffraction (RHEED).…”
Section: Growth and Elo Techniquementioning
confidence: 99%
“…8,9 In the last two decades, much attention has converged on the synthesis of one-dimensional (1D) nanostructured materials, such as nanorods, 10,11 nanowires, 12,13 nanoribbons, 14 and nanotubes. 15 These have been synthesized by various techniques such as the chemical co-precipitation method, 10 hydrothermal method, [16][17][18][19][20] thermal evaporation method, 21 pulsed laser deposition, 22 electrochemical deposition, 23 molecular beam epitaxy (MBE), 24 microwave assisted techniques, 25 chemical vapor deposition 26 etc. This interest is due to their unique properties and applications, which were superior to those of their bulk counterparts.…”
Section: Introductionmentioning
confidence: 99%