Influences of source and drain recess structures on SiGe epitaxy growth, SiGe step height, facet formation, I D,sat and resistance performance are investigated. Growth rate of SiGe height increases with decreased recess width at a fixed depth of 62 nm. Under a fixed recess width of 96.3 nm, the deeper the recess, the higher the growth rate of SiGe height. An increase in the depth/width ratio of the recessed Si geometry may promote SiGe {001} growth. Upon the recess, SiGe step height is influenced by the initial SiGe orientation. A longer {001} facet of SiGe initial orientation causes a higher growth rate of SiGe step height. Higher I Dsat and lower resistance can be achieved by increasing SiGe volume with wider recess width, deeper recess depth, and higher SiGe step height.

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Mn doped ZnS samples with composition formula Zn1-xMn xS where x = 0, 0.02, 0.05 and 0.10 were prepared by chemical method. Samples characterized for its structural, morphological and optical properties by X-ray diffraction (XRD), transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FTIR) and UV-vis spectrometry. XRD patterns confirm cubic zinc blend structure with no secondary phases for pure and Mn doped ZnS. Lattice constant value increases slightly with Mn concentration due to the substitution of Mn in ZnO lattice. TEM images show that the particles have spherical in shape with an average particle size 3-4 nm. The chemical species of the grown crystals are identified by FTIR spectra. Optical absorption spectra show decrement in band gap with increasing Mn concentration.

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Core–shell nanoparticles of Co doped Ni/NiO and incorporated GO sheets evidenced that the metamagnetic behavior at 5 K to 300 K temperatures.