Exciton–photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff

Abstract

We report the observation of strong exciton-photon coupling in a ZnSe based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn0.9Cd0.1Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO2/Ta2O5 mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of 23.6meV at 20K; composite evolution of the lower and upper polaritons; and narrowing of the lower polariton linewidth near resonance. The heavy hole exciton oscillator strength per quantum well is also deduced to be 1.78 × 10 13 cm −2 .

Determination of the etching mechanism in MgS and ZnMgSSe epitaxial lift‐off layers

“…Our usual wax deposition method is to melt small pieces directly on the epilayer surface [1][2][3], while for AlAs a solution of wax in trichloroethylene was used [6]. Although we have not compared all t, so far we have found no real difference in the etching speed between the two methods.…”

“…This technique allows the transfer of the active epilayer to a new substrate giving extra functionality, for example by removing (Zn,Cd)Se structures from GaAs to make microcavities [2,3]. Subsequently, we combined MgS with etch-resistant ZnMgSSe [4,5], producing wide bandgap barriers for ZnSe layers.…”

“…After growth, the samples were cleaved into 3 mm  3 mm squares and then the epilayer was coated with apiezon wax. The samples were etched as previously [1][2][3] in 10% HCl and the etching speed was calculated from the time required to remove the entire MgS layer. All the samples etched easily, apart from the sample with t ¼ 2 nm, which did not etch at all.…”

Properties and prospects of blue–green emitting II–VI‐based monolithic microcavities

“…Kelkar et al [114] reported a Rabi-splitting of 17.5 meV at 70 K and 10 meV at 175 K in a (Zn,Mg)(S,Se) MC with three (Zn,Cd)Se QWs as the resonant medium and dielectric Bragg mirrors made of SiO 2 /TiO 2 in 1995. Recently, a Rabi-splitting energy of 23.6 meV has been found in a ZnSe/ZnCdSe QW sample with SiO 2 /Ta 2 O 5 mirrors [120]. For ZnSe/ZnCdSe multi quantum well (MQW) cavity structure with ZnS and YF 3 DBRs a Rabbi-splitting of 44 meV at 300 K was reported [121].…”

A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

“…Recently, we have used this technique to transfer ZnSe/ZnCdSe quantum wells onto Bragg dielectric mirror stacks, giving the potential of combining the benefits of commercially available dielectric mirrors with molecular beam epitaxy (MBE) grown active regions in hybrid devices which has enabled us to observe exciton-photon coupling in the quantum well [3,4].…”