Epitaxial lift-off of MBE grown II–VI heterostructures using a novel MgS release layer

Bradford, C.; Currran, A.; Balocchi, Andréa; Cavenett, B.C.; Prior, K. A.; Warburton, Richard J.

doi:10.1016/j.jcrysgro.2005.01.019

Cited by 9 publications

(10 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For devices based on II-VI semiconductors, ELO has been demonstrated for II-VI materials grown on GaAs with a sacrificial layer of MgS [1,9]. While II-VI materials grown on GaAs allow quantum wells (QWs) with emission in the blue and into green with the incorporation of compressive strain (ZnCdSe/ZnSSe [10], ZnCdSSe/ZnSSe [11]), II-VI selenides near latticematched to InP provide a range of alloys with band-gaps throughout the visible spectrum [12].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…This was attributed to strain in the epitaxial structure, despite the support of the adhesive, preventing further transfer of the structures. For simple II-VI materials grown on InP, a sacrificial MgSe layer could be used, in a similar technique to that used for GaAs [9]; however, for devices requiring layers with high-Mg content these would also be etched during the ELO process, causing structural damage. The complete removal of the substrate is therefore investigated as a method for achieving ELO and transfer.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

See 1 more Smart Citation

Processing and characterisation of II–VI ZnCdMgSe thin film gain structures

et al. 2015

View full text Add to dashboard Cite

Lattice-matched II-VI selenide quantum well (QW) structures grown on InP substrates can be designed for emission throughout the visible spectrum. InP has, however, strong visiblelight absorption, so that a method for epitaxial lift-off and transfer to transparent substrates is desirable for vertically-integrated devices. We have designed and grown, via molecular beam epitaxy, ZnCdSe/ZnCdMgSe multi-QW gain regions for vertical emission, with the QWs positioned for resonant periodic gain. The release of the 2.7 µm-thick ZnCdSe/ZnCdMgSe multi-QW film is achieved via selective wet etching of the substrate and buffer layers leaving only the epitaxial layers, which are subsequently transferred to transparent substrates, including glass and thermally-conductive diamond. Post-transfer properties are investigated, with power and temperature-dependent surface-and edge-emitting photoluminescence A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT measurements demonstrating no observable strain relaxation effects or significant shift in comparison to unprocessed samples. The temperature dependant QW emission shift is found experimentally to be 0.13 nm/K. Samples capillary-bonded epitaxial-side to glass exhibited a 6 nm redshift under optical pumping of up to 35 mW at 405 nm, corresponding to a 46 K temperature increase in the pumped region; whereas those bonded to diamond exhibited no shift in QW emission, and thus efficient transfer of the heat from the pumped region. Atomic force microscopy analysis of the etched surface reveals a root-mean-square roughness of 3.6 nm. High quality optical interfaces are required to establish a good thermal and optical contact for high power optically pumped laser applications.

show abstract

Section: Accepted Manuscriptmentioning

confidence: 99%

Section: Accepted Manuscriptmentioning

confidence: 99%

Processing and characterisation of II–VI ZnCdMgSe thin film gain structures

et al. 2015

View full text Add to dashboard Cite

show abstract

“…GaN films were transferred onto optically-flat Corning microscope slides (soda-lime glass) via a process of chemical lift-off and direct fusion-bonding modeled on that developed for the chemical lift-off of ZnSe from GaAs substrates and bonding onto glass/ silica using MgS release layers [12][13][14][15][16][17] and for InGaN films by Liu et al [18]. The process flow is shown in Fig.…”

Section: Chemical Lift-off and Room Temperature Direct Fusion Wafer Bonmentioning

confidence: 99%

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Gautier

Moudakir

Patriarche

et al. 2013

Journal of Crystal Growth

View full text Add to dashboard Cite

“…GaN films were transferred onto optically-flat Corning microscope slides (soda-lime glass) via a process of chemical lift-off and direct fusion bonding modeled on that developed for the chemical lift-off of ZnSe from GaAs substrates and bonding onto glass/silica using MgS release layers [10][11][12][13][14][15], as shown in Figure 1. In this process a ZnO interlayer acts first as a crystallographic template for GaN and then as a sacrificial release layer, which is selectively etched away in 0.1M HCl in order to separate the GaN from the sapphire substrate.…”

Section: Chemical Lift-off and Wafer Bondingmentioning

confidence: 99%

Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

Rogers¹,

Ougazzaden

Sandana

et al. 2012

SPIE Proceedings

View full text Add to dashboard Cite

GaN was grown on ZnO-buffered c-sapphire (c-Al 2 O 3 ) substrates by Metal Organic Vapor Phase Epitaxy. The ZnO then served as a sacrificial release layer, allowing chemical lift-off of the GaN from the c-Al 2 O 3 substrate via selective wet etching of the ZnO. The GaN was subsequently direct-wafer-bonded onto a glass substrate. X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray microanalysis, Room Temperature Photoluminescence & optical microscopy confirmed bonding of several mm 2 of crack-free wurtzite GaN films onto a soda lime glass microscope slide with no obvious deterioration of the GaN morphology. Using such an approach, InGaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming and reusing the substrate.

show abstract

Epitaxial lift-off of MBE grown II–VI heterostructures using a novel MgS release layer

Cited by 9 publications

References 12 publications

Processing and characterisation of II–VI ZnCdMgSe thin film gain structures

Processing and characterisation of II–VI ZnCdMgSe thin film gain structures

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

Contact Info

Product

Resources

About