The rapid emergence of gallium-nitride (GaN) light-emitting diodes (LEDs) for solid-state lighting has created a timely opportunity for optical communications using visible light. One important challenge to address this opportunity is to extend the wavelength coverage of GaN LEDs without compromising their modulation properties. Here, a hybrid source for emission at 540 nm consisting of a 450 nm GaN micro-sized LED (micro-LED) with a micron-thick ZnCdSe/ZnCdMgSe multi-quantum-well color-converting membrane is reported. The membrane is liquid-capillary-bonded directly onto the sapphire window of the micro-LED for full hybridization. At an injection current of 100 mA, the color-converted power was found to be 37 μW. At this same current, the −3 dB optical modulation bandwidth of the bare GaN and hybrid micro-LEDs were 79 and 51 MHz, respectively. The intrinsic bandwidth of the color-converting membrane was found to be power-density independent over the range of the micro-LED operation at 145 MHz, which corresponds to a mean carrier lifetime of 1.9 ns.
We report the structural and optical properties of molecular beam epitaxy grown II–VI semiconductor multiple quantum well (MQW) structures and distributed Bragg reflector (DBR) on InP substrates for application in developing optically‐pumped semiconductor disk lasers (SDLs) operating in the green spectral range. One sample was grown directly on an InP substrate with an InGaAs buffer layer, while another had a 5‐period ZnCdMgSe‐based DBR grown on the InGaAs/InP substrate. X‐ray diffraction and scanning electron microscopy measurements revealed sharp superlattice peaks and abrupt layer interfaces, while steady‐state photoluminescence measurements demonstrated surface emission between 540–570 nm. Under pulsed excitation both samples exhibited features of amplified spontaneous emission (ASE) or stimulated emission, accompanied by luminescence lifetime shortening. The sample with the DBR showed higher surface luminescence and the onset of ASE at lower pump power. To further explore the design and performance of a ZnCdMgSe‐based DBR, a 20‐period DBR was grown and a reflectivity of 83% was obtained at ∼560 nm. We estimate that a DBR with ∼40 periods would be needed for optimal performance in a SDL using these materials. These results show the potential of II–VI MQW structures on InP substrates for the development of SDLs operational in the green–yellow wavelength range.
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