Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal

Purser, D. B.; Jenkins, M. Christopher; Lieu, D.; Vaccaro, F.J.; Faïk, A.; Hasan,; Leamy, H. J.; Carlin, Clifford M.; Sardela, M. R.; Zhao, Qing; Willander, Magnus; Karlsteen, M.

doi:10.4028/www.scientific.net/msf.338-342.313

Cited by 9 publications

(5 citation statements)

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“…In addition, the electron Hall mobility is isotropic and higher, compared with those of 4H-and 6H-polytypes, hence there is significant interest for synthesis of low-cost, large-size 3C-SiC wafers for microelectronic applications. Nevertheless, due to large differences in lattice constant (20%) and thermal expansion coefficient (8%) of the two materials, heteroepitaxy of SiC on Si substrate are reported to have high density of crystallographic structural defects such as stacking faults, microtwins, and inversion domain boundaries [15][16][17][18], however, the recent reports hint improvement of crystal quality by varying growth parameters such as substrate orientation and growth temperature etc, therefore the subject has got more interest amongst the researchers [19,20].…”

Section: Introductionmentioning

confidence: 99%

New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

Iqbal

Ali

Mehmood

et al. 2010

KEM

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We report the growth of SiC layers on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350oC, ∆T=50oC) in a low pressure chemical vapor deposition reactor. Typical Fourier transform infrared spectrum showed a dominant peak at 800 cm-1 due to Si-C bond excitation. Large area x-ray diffraction spectra revealed single crystalline cubic structures of 3C-SiC(111) and 3C-SiC(200) on Si(111) and Si(100) substrates, respectively. Cross-sectional views exposed by scanning electron microscopy display upto 104 µm thick SiC layer. Energy dispersive spectroscopy of the layers demonstrated stiochiometric growth of SiC. Surface roughness and morphology of the films were also checked with the help of atomic force microscopy. Resistivity of the as-grown layers increases with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacanies having activation energy 0.59 ±0.02 eV.

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Section: Introductionmentioning

confidence: 99%

New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

Iqbal

Ali

Mehmood

et al. 2010

KEM

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“…Porous silicon (PS) can be used as such a compliant substrate. Some preliminary attempts of the 3C-SiC growth on the top of the porous silicon layer have been reported [2,3]. Unfortunately, in these papers the carbonization step was not considered properly.…”

Section: Introductionmentioning

confidence: 99%

Carbonization of Porous Silicon for 3C-SiC Growth

Vasin

Ishikawa

Shibata

et al. 2007

MSF

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In the present work, the carbonization of porous silicon for the subsequent 3C-SiC growth has been systematically studied. The effect of temperature and acetylene flow-rate on the chemical state of the surface and structure relaxation was studied. It was found that the porous nano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of 3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, but at 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was found on porous silicon carbonized at temperature and with acetylene flow-rate above critical values.

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“…For this reason most research is focused to improve the crystallographic properties and reduce the residual stress of the SiC layer. This can be achieved by using one of the following substrate modification methods: 1. reduction of the growth temperature by using high reactive carbon precursor and/or atomic layer epitaxial techniques [4][5][6][7][8][9][10][11][12][13][14], 2. use of silicon on insulator substrates [15], 3. application of SMART-CUT or wafer bonding technologies [16][17][18], 4. use of porous and nanostructured silicon [18][19][20], 5. modification of the silicon substrate with group IV elements [21][22][23][24]. Only the latter method is applicable if the electrical properties of the heterojunction are of interest.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Surface Preparation on the Properties of SiC on Si(111)

Pezoldt

Schröter

Cimalla

et al. 2001

phys. stat. sol. (a)

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The silicon (111) surface was converted into silicon carbide by using: 1. propane diluted in hydrogen and rapid thermal processing, 2. elemental carbon deposited onto the silicon surface by solid source molecular beam epitaxy and subsequent annealing, i.e. conversion in a hydrogen poor environment, 3. modification of the silicon surface by Ge predeposition prior to elemental carbon deposition. These methods were compared according to their influence on the structure, morphology and electronic properties of the SiC/Si(111) heteroepitaxial system. It was found that the conversion in a hydrogen rich environment leads to the formation of a carbon ( 1 1 1 1 1 1) silicon carbide face, whereas a silicon (111) silicon carbide face was formed under hydrogen poor conditions. Germanium predeposition led to an improvement of the structural morphological and electrical properties of the silicon carbide-silicon heteroepitaxial system.

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Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal

Cited by 9 publications

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New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

Carbonization of Porous Silicon for 3C-SiC Growth

The Influence of Surface Preparation on the Properties of SiC on Si(111)

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