Color control of the white photoluminescence (PL) from carbon-incorporated silicon oxide is demonstrated. The carbon-incorporated silicon oxide was fabricated by carbonization of porous silicon in acetylene flow (at 650 and 850 °C) followed by wet oxidation (at 650 and 800 °C). It was shown that PL color can be controlled in the range of blue-white and yellow-white by selecting the porosity of starting porous silicon as well as the carbonization and oxidation temperatures. Low-temperature oxidation resulted in bluish light emission in lower porosity series, while high-temperature oxidation promoted yellow-white light emission. The maximal integral intensity of PL was observed after oxidation at 800 °C. It was shown that white PL from carbon-incorporated silicon oxide has blue and yellow-white PL bands originating from different light-emitting centers. The origin of blue PL is attributed to defects in silicon dioxide. Some trap levels at the interface of the carbon clusters and silicon oxide are suggested to be the origin of the yellow-white light emission.
Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250 °C the electrical resistivity of the GO films decreases by seven orders of magnitude and is governed by two processes with activation energies of 6.22 and 1.65 eV, respectively. It was shown that the first process is mainly associated with water and OH groups desorption reducing the thickness of the film by 35% and causing the resistivity decrease by five orders of magnitude. The corresponding activation energy is the effective value determined by desorption and electrical connection of GO flakes from different layers. The second process is mainly associated with desorption of oxygen epoxy and alkoxy groups connected with carbon located in the basal plane of GO. AFM and SKPFM methods showed that during the second process, first, the surface of GO plane is destroyed forming nanostructured surface with low work function and then at higher temperature a flat carbon plane is formed that results in an increase of the work function of reduced GO.Electronic supplementary materialThe online version of this article (10.1186/s11671-018-2536-z) contains supplementary material, which is available to authorized users.
A new approach to development of light-emitting SiO 2 :C layers on Si wafer is demonstrated. Carbon-incorporated silicon oxide was fabricated by three-step procedure: (1) formation of the porous silicon (por-Si) layer by ordinary anodization in HF:ethanol solution; (2) carbonization at 1000 C in acetylene flow (formation of por-Si:C layer); (3) oxidation in the flow of moisturized argon at 800 C (formation of SiO 2 :C layer). Resulting SiO 2 :C layer exhibited very strong and stable white photoluminescence at room temperature. It is shown that high reactivity of water vapor with nano-crystalline silicon and inertness with amorphous carbon play a key role in the formation of light-emitting SiO 2 :C layer.
The effect of vacuum annealing on local structure reconstruction, evolution of photoluminescence ͑PL͒ and paramagnetic defects in carbon-rich a-Si 1−x C x : H films ͑x = 0.7͒ was studied. Strong enhancement of visible ͑white-green͒ PL was observed after annealing in the temperature range of 400-500°C. Such enhancement was correlated with increasing of the concentration of carbon-hydrogen bonds in Si: C u H n accompanied with increase in the fluctuation of the interatomic potential. Complete disappearance of PL, "graphitization" of the carbon precipitates, and a strong increase in the concentration of the paramagnetic states were observed after annealing at 650°C and above. The enhancement and the degradation of PL after different-temperature treatments are explained by the following competing effects: ͑1͒ enhancement of the radiative recombination due to passivation of paramagnetic defects with hydrogen and increase of localization of photoexcited electron-hole pairs due to formation of new Si:CuH and ͑2͒ enhancement of the nonradiative recombination through the paramagnetic states due to increase in their concentration caused by graphitization of carbon precipitates after high-temperature treatment.
Optical and magnetic properties of SiO2:C nanopowders obtained by chemical and thermal modification of fumed silica were studied by Fourier transform infrared spectroscopy, Raman, continuous wave (CW) electron paramagnetic resonance (EPR), echo-detected EPR and pulsed electron nuclear double resonance (ENDOR) spectroscopy. Two overlapping signals of Lorentzian lineshape were detected in CW EPR spectra of the initial SiO2:C. The EPR signal at g = 2.0055(3) is due to the silicon dangling bonds, which vanishes after thermal annealing, and the second EPR signal at g = 2.0033(3) was attributed to the carbon-related defect (CRD). The annealing of the SiO2:C samples gives rise to the increase of the CRD spin density and shift to the higher g-values due to the appearance of the oxygen in the vicinity of the CRD. Based on the temperature-dependent behavior of the CRD EPR signal intensity, linewidth and resonance field position we have attributed it to the spin system with non-localized electrons hopping between neighboring carbon dangling bonds, which undergo a strong exchange interaction with a localized spin system of carbon nanodots. The observed motional narrowing of the CRD EPR signal in the temperature interval from 4 to 20 K indicates that electrons are mobile at 4 K which can be explained by a quantum character of the conductivity in the vicinity of the carbon layer. The electrons trapped in quantum wells move from one carbon nanodot to another by hopping process through the energy barrier. The fact that echo-detected EPR signal at g = 2.0035(3) was observed in SiO2:C sample annealed at T
ann ≥ 700 °C serves as evidence that non-localized electrons coexist with localized electrons that have the superhyperfine interaction with surrounding 13C and 29Si nuclei located at the SiO2:C interface. The presence of the superhyperfine interaction of CRD with 1H nuclei indicates the existence of hydrogenated regions in SiO2:C sample.
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