Epitaxial growth of stoichiometric SiC on Si(111) and 2°–5° off-oriented 6H–SiC(0001) substrates was carried out at low temperatures (800–1000 °C) by means of solid-source molecular beam epitaxy controlled by a quadrupole mass spectrometry based flux meter. The films were obtained on Si-stabilized surfaces showing (3×3) and (2×2) superstructures in the case of SiC(0001). The reflection high-energy diffraction (RHEED) patterns and damped RHEED-oscillations during the growth on 6H–SiC(0001) at T≳900 °C indicate that two-dimensional nucleation on terraces is the dominant growth process.
The antifouling properties against the simultaneous attack of five different bacteria and the stability of surface tethered poly(2-ethyl-2-oxazoline)s were investigated.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.