Abstract:In the present work, the carbonization of porous silicon for the subsequent 3C-SiC
growth has been systematically studied. The effect of temperature and acetylene flow-rate on the
chemical state of the surface and structure relaxation was studied. It was found that the porous
nano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of
3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, but
at 13000C the full recrystallization takes … Show more
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