Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer

High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

“…In previous papers, intermediate layers such as AlN [5], GaN [6], 3C-SiC [7], AlAs [8] and oxidized AlAs [9] were used to improve the GaN quality on Si. However, a device-grade high-quality GaN thin film is needed to fabricate high-performance devices, such as light emitting diodes and laser diodes.…”

Lattice-matched HfN buffer layers for epitaxy of GaN on Si

“…GaN grown on Si(001) often results in a mixture of wurtzite-and zincblende-structure grains. 23 In contrast, x-ray θ-2θ scans for layers on HfN/Si(001) indicated pure wurtzite GaN with a single crystallite orientation in both the [0002] and [10][11] directions. The GaN(0002) plane was confirmed to be parallel to Si(004), but the in-plane orientation relationship has yet to be determined.…”

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

“…GaN cannot be grown as a buffer layer directly on Si substrates owing to the poor nucleation of GaN on Si [23]. Therefore, many other growth techniques have been used; they include a GaN-free buffer layer [24], [25], a strained layer of AlN/GaN superlattices (SLs) [26], a single AlN buffer layer or multiple layers of AlN/GaN [27]- [29], an AlGaN buffer layer with an Al gradient [30], a patterned Si substrate [31], [32], selective growth [33], [34], a porous Si substrate [35], and Si on an insulator as a compliant substrate [36]. Although the successful growth of crack-free and highquality GaN epilayer on Si has been reported, the white-light LEDs performance of InGaN-based LEDs on Si remains very poor and no major breakthrough in their emission efficiency or light output power has been made [37]- [41].…”