Lattice-matched HfN buffer layers for epitaxy of GaN on Si

Abstract

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using sputter-deposited hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001)

MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer

“…To the best of our knowledge, no (1 0 2) rocking curves have been reported for ZnO films grown on Si(1 1 1) substrates until now. Comparing with GaN, it is shown that our FWHM values are comparable to high-quality GaN films grown on a Si(1 1 1) substrate [13,14]. 4 gives the result of a temperaturedependent PL measurement of our ZnO/AlN/ Si(1 1 1) sample.…”

GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy

“…To solve these problems, intermediate layers, with a smaller lattice mismatch and thermal expansion coefficient difference between GaN and Si, have been employed to avoid cracking, and also serve as a diffusion barrier to prevent the chemical reaction and diffusion between GaN and Si at high temperatures. AlN [4][5], SiC [6], HfN [7], and Gd 2 O 3 [8] have been used not only as the intermediate layers but also to effectively facilitate GaN epitaxial growth.…”

Poly- and single-crystalline h-GaN grown on SiCN/Si(100) and SiCN/Si(111) substrates by MOCVD

“…Some papers have reported growth of GaN on Si(100) or Si(111) substrates through particular buffers to overcome the large density of defects and cracks. [2][3][4][5] In our laboratory, we have recently used C 3 H 8 , NH 3 , SiH 4 , and H 2 as source gases to grow a cubic single-crystalline SiCN layer by rapid thermal chemical vapor deposition (RTCVD) and successfully used it in a deep-ultraviolet detector. 6,7 Because the lattice constant of cubic SiCN is similar to that of SiC(111), we attempted to use SiCN as a buffer layer for growing GaN on Si substrates.…”