High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

Ishikawa, Hiroyasu; Zhao, Guangyuan; Nakada, Naoyuki; Egawa, Takashi; Soga, Tetsuo; Jimbo, Takashi; Umeno, Masayoshi

doi:10.1002/(sici)1521-396x(199911)176:1<599::aid-pssa599>3.0.co;2-f

Cited by 69 publications

(38 citation statements)

References 9 publications

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“…The thick AlN (120 nm) AlGaN (380 nm) buffer layer [53,54] prevents cracking of the subsequently grown film by inducing compressive stress during growth. The output power was 23 and 19.4 mW at 20 mA and 506 nm with 8 V and 16 V necessary to drive this current for top and vertically contacted LEDs, respectively.…”

Section: Al(ga)n/gan Multilayersmentioning

confidence: 99%

“…AlGaN Buffer Layers AlGaN buffer layers are often grown on AlN seed layers and reported by some authors to improve the GaN layer quality [52][53][54][55]. They usually enhance the series resistance and induce a compressive stress on GaN layers grown on top.…”

Section: Introductionmentioning

confidence: 99%

“…Ishikawa et al [53,54] obtained crack-free 1 mm thick GaN with a GaN(0002) X-ray rocking curve FWHM of 600 arcsec and narrow (8.8 meV FWHM) PL of the band edge emission at 4.2 K using an AlGaN buffer layer. The same group recently presented a crack-free LED structure based on such a buffer layer with 20 mW at 20 mA which is relatively bright when compared to other LEDs on Si [56].…”

Section: Introductionmentioning

confidence: 99%

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GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

181

111

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Nowadays, GaN‐based devices are usually grown on sapphire or silicon‐carbide substrates. These are either insulating or very expensive and not available in large diameter. A well‐conducting low‐cost alternative is silicon also enabling the integration of optoelectronics or high‐power electronics with Si‐based electronics. The main problem limiting a fast progress of GaN growth on silicon is the thermal mismatch of GaN and Si leading to cracks even below device‐relevant layer thicknesses. In the last few years, since the first demonstration of a molecular beam epitaxy grown GaN‐based light emitting diode on Si in 1998 the activities in research of GaN on Si increased dramatically. Meanwhile, several concepts to lower stress, avoid cracks, and improve the material quality exist. Meanwhile the material quality has improved significantly and is about as good as on sapphire so that it is only a question of time until GaN‐based devices on Si come into market. This article gives a review on the latest developments in group‐III nitride growth on Si by metal organic vapor phase epitaxy.

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Section: Al(ga)n/gan Multilayersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

181

111

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“…Nikishin et al found that depositing a thin layer of aluminum prior to AlN growth in molecular beam epitaxy improves the quality and decreases the surface roughness of both the buffer and overgrown GaN [8,9]. It was later shown that the quality of the buffer and overgrown GaN can also be improved in metalorganic chemical vapor deposition (MOCVD) by pre-treating the substrate with trimethylaluminum (TMAl) [4]. It is generally thought this aluminum nucleation layer, or "predose", enhances the lateral growth of AlN which is associated with decreased dislocation densities, decreased surface roughness, improved strain management, and improved performance of overgrown device layers [10,11].…”

Section: Introductionmentioning

confidence: 99%

Structure and chemistry of aluminum predose layers in AlN epitaxy on (111) silicon

et al. 2016

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“…5 III-nitride wide bandgap semiconductors are excellent host materials for erbium ions due to their structural and thermal stabilities. Monolithic growth of III-nitride semiconductor on silicon substrate has also been demonstrated, 6,7 which opens the possibility of integrated optical amplifiers in silicon photonics based on erbium-doped III-nitride. Photoluminescence [8][9][10] and optical amplification 11 in 1.54 lm wavelength window have been demonstrated in waveguides based on Er-doped GaN and AlGaN epilayers at room temperature.…”

mentioning

confidence: 99%

Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

Hui

Xie

Feng

et al. 2014

Applied Physics Letters

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Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2×10−21cm2 at 980 nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of epilayers. However, spontaneous emission carrier lifetimes in these waveguides are directly related to both the crystalline quality and the optical loss, and thus can be used as a material quality indicator.

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High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

Cited by 69 publications

References 9 publications

GaN-Based Devices on Si

GaN-Based Devices on Si

Structure and chemistry of aluminum predose layers in AlN epitaxy on (111) silicon

Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

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