Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres

Tonisch, Katja; Weise, Frank; Stubenrauch, Mike; Cimalla, V.; Ecke, G.; Will, Florentina; Romanus, H.; Mrotzek, S.; Hofmeister, H.; Hoffmann, Martin; Hülsenberg, Dagmar; Ambacher, O.

doi:10.1016/j.physe.2007.01.001

Cited by 4 publications

(4 citation statements)

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“…For the preparation of nanowires, an extremely wide range of possibilities have been developed. In this work, the following methods have been used to prepare nanowires: Au nanowires were grown electrochemically in polymer foil templates with nanopores created by ion irradiation and subsequent selective etching 44, 45. W nanowires were formed by directional solidification of NiAl‐W eutectic alloys 46, 47. Polycrystalline Au nanowires are obtained by employing electron‐beam lithography, as well as by thin film fracture lithography, where the nanoscalefracture pattern in a thin film serves as shadow mask for the deposition of Au nanowires 48–52. Semiconducting nanowires were grown by low pressure chemical vapor deposition (LPCVD) (Si 53), metal organic chemical vapor deposition (MOCVD) (AlN 54 and In 2 O 3 55), and molecular beam epitaxy (MBE) (InN, GaN 56, 57). …”

Section: Methodsmentioning

confidence: 99%

“…Semiconducting nanowires were grown by low pressure chemical vapor deposition (LPCVD) (Si 53), metal organic chemical vapor deposition (MOCVD) (AlN 54 and In 2 O 3 55), and molecular beam epitaxy (MBE) (InN, GaN 56, 57).…”

Section: Methodsmentioning

confidence: 99%

“… (online colour at: http://www.pss-b.com/) Nanowires for AFM‐based analysis: (a) MBE grown GaN nanowires on Si 66–69, (b) SiC nanowires fabricated by self‐masking during dry etching 65, (c) LPCVD grown Si nanowire 53 on a carbon grid, clamped by FIB and (d) carbon nanotube on a nanogrid 70, 71 without clamping. …”

Section: Characterization Methodsmentioning

confidence: 99%

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Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

et al. 2010

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Targeting protein kinases in cancer therapy with irreversible small-molecule inhibitors is moving to the forefront of kinase-inhibitor research and is thought to be an effective means of overcoming mutation-associated drug resistance in epidermal growth factor receptor kinase (EGFR). We generated a detection technique that allows direct measurements of covalent bond formation without relying on kinase activity, thereby allowing the straightforward investigation of the influence of steric clashes on covalent inhibitors in different resistant kinase mutants. The obtained results are discussed together with structural biology and biochemical studies of catalytic activity in both wild-type and gatekeeper mutated kinase variants to draw conclusions about the impact of steric hindrance and increased catalytic activity in drug-resistant kinase variants.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

et al. 2010

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“…Focused ion beam (FIB), a rapid and flexible method, has been utilized to deposit Pt metal at room temperature on Si NW-based nanodevices [9][10][11]. To the best of our knowledge, there are no works on electrical characterization and microstructure analysis of FIB-Pt contact to Si NWs.…”

Section: Introductionmentioning

confidence: 99%

Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

Chiu

et al. 2010

Nanotechnology

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Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (rho(c)) of 1.54 x 10(-6) Omega cm(2). Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow rho(c). The value of rho(c) lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

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Elastic properties of nanowires

Röhlig

Niebelschütz

Brueckner

et al. 2010

Physica Status Solidi (b)

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The elastic properties of metallic and semiconducting nanowires were analyzed by different techniques employing static and dynamic loads. The reliability of the methods is verified by analyzing well defined microstructures and a good agreement for the values of the Young's modulus determined by the different methods was achieved. For the investigated materials systems (Au, W, Si, InN), basically no differences in the Young's moduli were observed between microstructures, bulk material, and nanowires with radii of 20-300 nm. Microstructure, morphological undulation, defects, and contaminations,however, can drastically change the apparent Young's moduli of nanowires. Examples are given, where an apparent increasing or decreasing of the Young's modulus with decreasing diameter is caused by such effects. The same effects have also influence on the fracture strength in nanowires. While perfect Au nanowires exhibit fracture strengths exceeding the bulk values up to two orders of magnitude, any anomaly causes earlier failure. In addition, failure mechanisms are observed to be dependent on themicrostructure. While single crystallineAu nanowires have shown a pure elastic deformation upon load, polycrystalline nanowires show a remarkable plastic deformation before breaking

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Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres

Cited by 4 publications

References 5 publications

Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

Elastic properties of nanowires

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