Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

Ho, Chih‐Hsiang; Chiu, S H; Ke, Jr‐Jian; Tsai, Kun-Tong; Dai, Yu An; Hsu, Jung-Fu; Chang, M L; He, Jr Hau

doi:10.1088/0957-4484/21/13/134008

Cited by 10 publications

(9 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(1): 2R contact þ R 4-probe ¼ R 2-probe . 20 The difference in slope between the 2-and 4-point measurements is due to the contact resistance. However, as can be seen in Fig.…”

Section: A Pt Interconnect Deposition and Electrical Characterizationmentioning

confidence: 99%

“…14 The decomposition process is a result of the interaction of surface emitted secondary electrons in the irradiated area with locally adsorbed gas molecules delivered by a gas injector system (GIS). As a result, using either electron beam induced deposition (EBID) 15,16 or ion beam induced deposition (IBID), [17][18][19][20] nanowire interconnects can be deposited in a single step, making it a very facile process. Furthermore, the technique has the potential to surpass the resolution limits posed by top-down lithographic methods.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrical properties of platinum interconnects deposited by electron beam induced deposition of the carbon-free precursor, Pt(PF3)4

O’Regan

Lee

Holmes

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Comprehensive analysis of the electrical properties, structure and composition of Pt interconnects, developed via mask-less, electron beam induced deposition of the carbon-free Pt precursor, Pt(PF3)4, is presented. The results demonstrate significantly improved electrical performance in comparison with that generated from the standard organometallic precursor, (CH3)3Pt(CpCH3). In particular, the Pt interconnects exhibited perfect ohmic behavior and resistivity that can be diminished to 0.24 × 10−3 Ω cm, which is only one order of magnitude higher than bulk Pt, in comparison to 0.2 Ω cm for the standard carbon-containing interconnects. A maximum current density of 1.87 × 107 A cm−2 was achieved for the carbon-free Pt, compared to 9.44 × 105 A cm−2 for the standard Pt precursor. The enhanced electrical properties of the as-deposited materials can be explained by the absence of large amounts of carbon impurities, and their further improvement by postdeposition annealing in N2. In-situ TEM heating experiments confirmed that the annealing step induces sintering of the Pt nanocrystals and improved crystallinity, which contributes to the enhanced electrical performance. Alternative annealing under reducing conditions resulted in improved performance of the standard Pt interconnects, while the carbon-free deposit suffered electrical and structural breakage due to formation of larger Pt island

show abstract

“…(1): 2R contact þ R 4-probe ¼ R 2-probe . 20 The difference in slope between the 2-and 4-point measurements is due to the contact resistance. However, as can be seen in Fig.…”

Section: A Pt Interconnect Deposition and Electrical Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical properties of platinum interconnects deposited by electron beam induced deposition of the carbon-free precursor, Pt(PF3)4

O’Regan

Lee

Holmes

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

“…Vera La Ferrara organometallic precursor to deposit nanocontacts [4,5]. It can be used in different ways.…”

Section: Nanostructured Materials Driven By Dielectrophoresis On Nanomentioning

confidence: 99%

Nanostructured Materials Driven by Dielectrophoresis on Nanoelectrodes Patterned by Focused Ion Beam

Ferrara¹

2013

Lecture Notes in Nanoscale Science and Technology

View full text Add to dashboard Cite

In this chapter the combined use of focused ion beam and dielectrophoresis is reported to show the powerful tool for realizing nanodevices based on nanostructured materials.This combination allows to positioning by dielectrophoresis between nanoelectrodes deposited by focused ion beam single palladium nanowire, ZnO nanostructures, and graphene multilayer flakes dispersed in appropriate solutions. Devices based on single Pd nanowire operate as hydrogen sensor at room temperature. Nanostructures of ZnO are assembled and characterized as photodetector.Graphene multilayer flakes are assembled by DEP towards electrode gap milled by FIB, and its electrical resistance is measured. IntroductionThe fabrication of nanoelectronic circuits needs to downscale the dimensions of electrodes. Usually device electrodes are built using electron beam or optical lithography, metallization, and liftoff. The focused ion beam (FIB) is often used as alternative method for realizing the nanoelectrodes on electronic devices. The use of high energy FIB is an already well-established technique in microelectronics and microfabrication for mask-less patterning [1][2][3]. This apparatus is able to micromachine the electrode directly onto substrate becoming a "direct-write" tool. The electrodes can be patterned in few minutes and be a good alternative to electrodes prefabricated by multistep and longtime procedure. FIB operating mechanism relies on a highly focused and energetic gallium ion beam that interacts with a platinum

show abstract

“…Locating a NW and making contacts on the NW by metal deposition using focused ion beam (FIB) at nanometer level makes such a system a versatile tool for nanolithography. There are several reports [1], [2] on single NW device fabricated by FIB deposited Pt and carbon.…”

Section: Introductionmentioning

confidence: 99%

Junction Effect on Transport Properties of a Single Si Nanowire Metal–Semiconductor–Metal Device

Samanta

Das

Raychaudhuri

2013

IEEE Trans. Nanotechnology

View full text Add to dashboard Cite

We report measurements of electrical transport properties and impedance spectroscopy studies on a single Si nanowire (diameter ∼ 50 nm) metal-semiconductor-metal device, fabricated using electron beam deposited Pt. The temperaturedependent four-probe resistivity of the nanowire exhibits freezing of carriers below 30 K, while at higher temperature, it resembles the temperature variation seen in bulk doped crystals. The device shows reproducible nonlinear and asymmetric currentvoltage (I-V ) characteristics which were quantitatively analyzed and were found to arise from unequal Schottky-type barriers at the two ends which also showed temperature dependence. The measured contact resistance is bias as well as temperature dependent and reduces as the bias is increased.Index Terms-Electrical transport and impedance spectroscopy, metal-semiconductor-metal (MSM) device, single Si nanowire.

show abstract

Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

Cited by 10 publications

References 28 publications

Electrical properties of platinum interconnects deposited by electron beam induced deposition of the carbon-free precursor, Pt(PF3)4

Electrical properties of platinum interconnects deposited by electron beam induced deposition of the carbon-free precursor, Pt(PF3)4

Nanostructured Materials Driven by Dielectrophoresis on Nanoelectrodes Patterned by Focused Ion Beam

Junction Effect on Transport Properties of a Single Si Nanowire Metal–Semiconductor–Metal Device

Contact Info

Product

Resources

About