Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

Yamane, Keisuke; Kobayashi, Toshirou; Furukawa, Yukio; Okada, Hiroshi; Yonezu, Hiroo; Wakahara, Akihiro

doi:10.1016/j.jcrysgro.2008.09.097

Cited by 44 publications

(21 citation statements)

References 16 publications

(18 reference statements)

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“…During the thermal treatment, P 2 cell temperature was kept at $ 400 1C in order to avoid P 2 irradiation on the Si substrate. After the thermal treatment, the Si substrate was cooled down to 440 1C [15,16] and the P 2 cell was heated up to $ 600 1C. Then, P 2 flux was supplied for 10 s to form a Pprelayer on the Si substrate.…”

Section: Methodsmentioning

confidence: 99%

“…We have already reported the generation and the suppression process of SFs and APDs in GaP layers grown by migration-enhanced epitaxy (MEE) [15]. Recently, we revealed that pits formed on MEE-grown GaP layers due to the melt-back etching between Ga and Si at the initial growth stage [16]. In order to overcome this problem, we attempted to introduce two monolayers (MLs) MBE growth before MEE growth.…”

Section: Introductionmentioning

confidence: 99%

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Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

Yamane

Kawai

Furukawa

et al. 2010

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

Yamane

Kawai

Furukawa

et al. 2010

Journal of Crystal Growth

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“…11,[14][15][16][17][18][19][20] After pretreatment, 170 nm GaP was deposited on top of Si 0.8 Ge 0.2 /Si(001) substrates, using phosphine gas (PH 3 ) thermally cracked at 920 C and elemental Ga as source materials. The temperature and dose profile of the GaP growth procedure is illustrated in Fig.…”

Section: B Gap Depositionmentioning

confidence: 99%

GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study

Skibitzki¹,

Hatami²,

Yamamoto³

et al. 2012

Journal of Applied Physics

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Articles you may be interested inGaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure J. Appl. Phys. 111, 083534 (2012); 10.1063/1.4706573In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si (100) To develop a III/V wide bandgap collector concept for future SiGe heterobipolar transistor performance increase, a heterostructure growth study of GaP on pseudomorphic 4 off-oriented Si 0.8 Ge 0.2 /Si(001) substrates was performed. For pseudomorphic GaP/Si 0.8 Ge 0.2 /Si(001) heterostructure growth, critical thickness of GaP on Si and maximum thermal budget for GaP deposition were evaluated. A detailed structure and defect characterization study by x-ray diffraction, atomic force microscopy, and transmission electron microscopy is reported on single crystalline 170 nm GaP/20 nm Si 0.8 Ge 0.2 /Si(001). Results show that 20 nm Si 0.8 Ge 0.2 /Si(001) can be overgrown by 170 nm GaP without affecting the pseudomorphism of the Si 0.8 Ge 0.2 /Si(001) layer. The GaP layer grows however partially relaxed, mainly due to defect nucleation at the GaP/ Si 0.8 Ge 0.2 interface during initial island coalescence. The achievement of 2D GaP growth conditions on Si 0.8 Ge 0.2 /Si(001) systems is thus a crucial step for achieving fully pseudomorphic heterostructures. Anti-phase domain-free GaP growth is observed for film thicknesses beyond 70 nm. V C 2012 American Institute of Physics. [http://dx.

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“…6 Consequently, the heteroepitaxial growth of pseudomorphic GaP layers on Si without defects is of great interest because they can be employed as a conversion layer between III-V-N alloys and Si. [10][11][12][13][14][15][16] The heterovalent epitaxy of GaP on Si͑001͒ contains several issues. 10 Thus, most previous studies focused on the reduction of crystalline defects in GaP layers on Si by either molecular beam epitaxy ͑MBE͒ or metalorganic vapor phase epitaxy ͑MOVPE͒.…”

Section: Lattice Relaxation Process and Crystallographic Tilt In Gap mentioning

confidence: 99%

Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy

Takagi

Furukawa

Wakahara

et al. 2010

Journal of Applied Physics

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Ductile relaxation in cracked metal-organic chemical-vapor-deposition-grown AlGaN films on GaNA lattice relaxation process and a crystallographic tilt in GaP layers grown on misoriented Si͑001͒ substrates by metalorganic vapor phase epitaxy were investigated. Strained pseudomorphic GaP layers without defects on Si were successfully achieved by the optimization of growth conditions. Below critical thickness, the strained GaP layers were tilted in the misoriented direction of the Si substrates and triclinically distorted. Above critical thickness, the residual strain in the GaP layers was progressively relaxed with increased thickness of the GaP layers by forming 60°misfit dislocations propagating to the two orthogonal ͗110͘ directions at the heterointerface. X-ray diffuse scattering around the symmetrical GaP͑004͒ diffraction was observed after introducing misfit dislocations. Diffuse scattering became dominant with an increase in the density of the misfit dislocations and resulted in a broadening of the full width at half maximum of the x-ray rocking curves. The GaP layers that were relaxed with highly dense misfit dislocations were tilted opposite of the misoriented direction due to the imbalance nucleation of the misfit dislocations on each ͕111͖ glide plane.

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Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

Cited by 44 publications

References 16 publications

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study

Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy

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