GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study

Abstract

Articles you may be interested inGaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure J. Appl. Phys. 111, 083534 (2012); 10.1063/1.4706573In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si (100) To develop a III/V wide bandgap collector concept for future SiGe heterobipolar transistor performance increase, a heterostructure growth study of GaP on pseudomorphic 4 off-oriented Si 0.8 Ge 0.2 /Si(001) substrates was performed. For pseudomorphic GaP/Si 0.8 Ge 0.2 /Si(001) heterostructure growth, critical thickness of GaP on Si and maximum thermal budget for GaP deposition were evaluated. A detailed structure and defect characterization study by x-ray diffraction, atomic force microscopy, and transmission electron microscopy is reported on single crystalline 170 nm GaP/20 nm Si 0.8 Ge 0.2 /Si(001). Results show that 20 nm Si 0.8 Ge 0.2 /Si(001) can be overgrown by 170 nm GaP without affecting the pseudomorphism of the Si 0.8 Ge 0.2 /Si(001) layer. The GaP layer grows however partially relaxed, mainly due to defect nucleation at the GaP/ Si 0.8 Ge 0.2 interface during initial island coalescence. The achievement of 2D GaP growth conditions on Si 0.8 Ge 0.2 /Si(001) systems is thus a crucial step for achieving fully pseudomorphic heterostructures. Anti-phase domain-free GaP growth is observed for film thicknesses beyond 70 nm. V C 2012 American Institute of Physics. [http://dx.

Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup

“…Owing to the fourfold symmetry of the zinc-blende GaP crystalline structure, four MT variants are generally observed on the pole figure around = 16 , with ' = 0, 90, 180 and 270 . We note the MTs elongated in real space parallel to the atomic step boundaries MT-A and MT-C, and those perpendicular to the step boundaries MT-B and MT-D, in agreement with the notation of another research group (Skibitzki et al, 2012). Notice that Skibitzki and co-workers used a goniometer head to maintain the Si [001] nominal direction parallel to the ' rotation axis.…”

Heterointerface‐Driven Band Alignment Engineering and its Impact on Macro‐Performance in Semiconductor Multilayer Nanostructures

“…The intense tensile state at WoB interface implies the existence of a component with an extremely small lattice constant far lower than that of AlGaAsSb. Since this layer is sufficiently thin to be less than the critical thickness, elastic strain state can be maintained without generating undesired dislocations . The gradually strained BoW interface indicates the gradient variation of composition as well as the lattice constant.…”

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

“…3(a)) does not exhibit features that can be identified as dislocations via ECCI with any confidence. Most likely, there are no observable MDs in the 30 nm GaP/Si sample because it is either below the critical thickness for dislocation nucleation, which for GaP on Si has been calculated using the Matthews-Blakeslee model 28 to be $50 nm at growth temperature and experimentally shown to fall between 45 and 90 nm, [29][30][31][32] or the layer is not sufficiently thick to yield observable glide of any dislocations that have been nucleated. As the GaP layer thickness increases, misfit dislocations begin to initiate and grow in length to accommodate the increasing strain energy in the layer, which is shown in the 50 nm (Figure 3(b)) and 100 nm (Figure 3(c)) samples.…”