Heterointerface‐Driven Band Alignment Engineering and its Impact on Macro‐Performance in Semiconductor Multilayer Nanostructures

Abstract

Interfaces in semiconductor heterostructures is of continuously greater significance in the trend of scaling materials down to the atomic limit. Since atoms tend to behave more irregularly around interfaces than in internal materials, accurate energy band alignment becomes a major challenge, which determines the ultimate performance of devices. Therefore, a comprehensive understanding of the interplay between heterointerface, energy band, and macro‐performance is desiderated. Here, such interplay is explored by investigating asymmetric heterointerfaces with identical fabrication parameters in multiple‐quantum‐well lasers. The unexpected asymmetry derives from the atomic discrepancy around heterointerfaces, which ultimately improves the optical property through altered valence band offsets. Strain and charge distribution around heterointerfaces are characterized via geometric phase analysis and in situ bias electron holography, respectively. Combining experiments with theories, arsenic‐enrichment at one of the interfaces is considered the origin of asymmetry. To reveal actual band alignment, valence band model is modified focusing on the transition around heterojunctions. The enhanced photoluminescence intensity reflects the alleviation of hole confinement insufficiency and the enlargement of valence band offset. The results help to advance the understanding of the general problem of interface in nanostructures and provide guidance applicable to various scenarios for micro–macro correlation.

A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells

“…An increment in open-circuit voltage (V OC ), short-circuit current density (J sc ), and Fill Factor (%), as well as the PCE, would be the outcome. On the other hand, the blue hole particle at point B (E V -Low) represents trapped in the well passing needs a considerable amount of energy, and it is impossible for a hole to gain this high amount of energy so, the consequence would be a reduction in parameters and PCE 52 , 53 . Functional parameters for two selected points are gathered in Table 1 .…”

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

“…[10,11] Due to weaker bond strength of In─V, indium atoms tend to exchange their position with Al and Ga, which are closer to In. [28] This might be the reason of decreased indium content in InGaAsSb/AlGaAsSb QW. [25] The blueshift in PL peak corresponds to indium interdiffusion in well layers to interface at barrier layers.…”

“…[11,12] In heterointerface of an InGaAsSb/AlGaAsSb structure, the As-rich well-on-barrier (WoB) interface serves as a better hole barrier than barrier-on-well (BoW) interface, which helps in overcoming inherent weakness of insufficient valence band offset and successful optimization of photoluminescence (PL) intensity. [13] Therefore, quality of interface is very important for the improvement of macro-performance. Furthermore, the interface roughness, variation of alloy component, and defects could cause localized states in semiconductors, resulting in carrier localization, which alters the optical properties of semiconductors.…”

Heterostructured plasmonic memristors with tunable opto-synaptic functionalities

“…The considerable difference between the set and reset voltages of the TiO 2 -In 2 O 3 heterostructured opto-memristors is expected to originate from the type II heterointerfaces. 36 The calculation of power consumption of the ITO/TiO 2 -In 2 O 3 /Au sample (Fig. 5c) shows a considerable difference in the energy consumption of the optomemristor device during set and reset processes.…”

“…This rectification behaviour is characteristic of a type-II heterointerface. 36 Optomemristors have also demonstrated stable performance after several sequential I-V cycles. The operating current of the selfrectifying (ITO/TiO 2 -In 2 O 3 (N 2 )/Au) opto-memristor is considerably lower than that of the ITO/TiO 2 -In 2 O 3 /Au unit ( Fig.…”