A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells

Hashemi, Maryam; Minbashi, Mehran; Ghorashi, Seyed Mohammad Bagher; Ghobadi, Arash

doi:10.1038/s41598-021-99012-6

Cited by 16 publications

(6 citation statements)

References 53 publications

(29 reference statements)

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“…From Figure 7(c) and 7(d), it was identified that the direct energy band gaps of the films were found as 2.32, 2.52 and 2.56 eV and the indirect energy band gaps of the films were found as 2.08, 2.24 and 2.36 eV, for the samples IS, IS-350 and IS-450, respectively. The observed band gap values were found to be in concordance with the reported band gap values for In2S3 films in previous studies [25,[50][51][52]. Interestingly, it was found that the high temperature treated films had higher Eg than as-deposited films.…”

Section: Optical Characterizationsupporting

confidence: 91%

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Akçay¹,

ERENLER²,

ÖZEN³

et al. 2023

Gazi University Journal of Science

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Indium sulfide (In2S3) thin films were deposited on soda lime glass (SLG) substrate by radio frequency (RF) magnetron sputtering technique at 150 °C and then thermally annealed under argon (Ar) atmosphere at 350 °C and 450 °C for a period of 30 min. The effect of post-thermal annealing on the structural, morphological, and optical properties of the films were investigated. The formation of the stable tetragonal β-In2S3 was confirmed by X-ray diffraction (XRD) analysis. It was seen that the thermal annealing treatment at 450 °C improved the crystallization of the films. The change in the surface morphology of the films depending on the post-thermal annealing process were determined by atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses. The energy dispersive X-ray spectroscopy (EDX) analysis indicated that the films had slightly sulfur (S) deficit composition and the concentration of S slightly increased with the thermal annealing process. The room temperature (RT) photoluminescence (PL) spectra revealed that the films included sulfur vacancies (VS: donor), indium (In) vacancies (VIn: acceptor), indium interstitial (Ini: donor) and oxygen (O) in vacancy of sulfur (OVs: acceptor) defects with strong and broad emission bands at around 1.70 eV, 2.20 eV, and 2.71 eV.

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Section: Optical Characterizationsupporting

confidence: 91%

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Akçay¹,

ERENLER²,

ÖZEN³

et al. 2023

Gazi University Journal of Science

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“…With this regard, we explored the properties of ZrS 2 to a great extent for diverse emerging chalcogenide thin-film solar cells such as SnS, Sb 2 Se 3 , Cu 2 SnS 3 , CuSb(S,Se) 2 , and Cu 2 BaSn(S,Se) 4 using SCAPS-1D for the first time. Moreover, the SCAPS-1D simulation studies are consistent with the experimental results, [37,38] witnessing its reliability in understanding the solar cells' function. Therefore, we extensively studied the effect of bandgap, thickness, carrier concentration, and defect density of ZrS 2 on the performance of diverse emerging chalcogenide thin-film solar cells by unveiling its unique properties that have not been explored.…”

Section: Introductionsupporting

confidence: 69%

Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Arockiya-Dass,

Sekar,

Marasamy

2023

Energy Tech

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SnS, Sb2Se3, Cu2SnS3, CuSb(S,Se)2, and Cu2BaSn(S,Se)4 are emerging as promising light absorbers for thin‐film photovoltaics due to their extraordinary optoelectronic properties. However, improper band alignment with the buffer and large open‐circuit voltage (VOC) deficit limits their power conversion efficiencies (PCE). Therefore, finding a suitable buffer that overcomes these obstacles is crucial. Herein, ZrS2 as an alternative buffer for the aforementioned emerging thin‐film solar cells using SCAPS‐1D is proposed. The important ZrS2 parameters are optimized, including bandgap, thickness, carrier concentration, and defect density. Interestingly, ZrS2 behaves as a degenerate semiconductor at carrier concentrations >1E17 cm−3, improving the conductivity of the solar cells; it also demonstrates a high defect tolerance nature when the defect density lies between 1E12 and 1E18 cm−3. After ZrS2 parameters optimization, the built‐in potential of SnS, Sb2Se3, Cu2SnS3, CuSb(S,Se)2, and Cu2BaSn(S,Se)4 solar cells is enhanced by 0.2, 0.58, 0.05, 0.42, and 0.3 V, respectively, reducing recombination rate. Upon optimizing absorbers parameters, a PCE > 35% for SnS, Sb2Se3, and CuSb(S,Se)2 while >32% for Cu2SnS3 and Cu2BaSn(S,Se)4 solar cells is accomplished with low VOC loss (≈0.1 V). The absorbers must have high carrier concentration (1E20 cm−3) and low defect density (1E14 cm−3) to achieve these PCEs.

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“…The peaks of In 2 S 3 are well matched with the JCPDS card no. 00-25-0390, which confirms the crystallization of pure tetragonal phase In 2 S 3 . After the surface functionalization of S-C 3 N 4 -dots on the surface of In 2 S 3 nanosheets, the XRD peaks remain intact and no other significant peak is observed due to the S-C 3 N 4 -dots.…”

Section: Resultsmentioning

confidence: 64%

Nanosheets of In₂S₃/S-C₃N₄-Dots for Solar Water-Splitting in Saline Water

Sharma

Basu

2022

Langmuir

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Hydrogen generation from splitting of water under the photoelectrochemical (PEC) pathway is considered as the most promising strategy for covering the upcoming fuel crisis by taking care of all environmental issues. In this context, In2S3 can be explored as it is a visible light-active semiconductor with an appropriate band alignment with the water redox potential. Herein, In2S3 nanosheets are developed by the chemical method. The nanosheets of In2S3 absorb high visible light due to the manifold inside scattering and reflection. The PEC activity of In2S3 is enhanced because of the increase in the light absorbance of the materials. In the present work, at 1.18 V versus RHE in 3.5 wt % NaCl, a maximum 2.07 mA/cm2 photocurrent density can be achieved by In2S3 nanosheets. However, In2S3 suffers strongly due to photo-corrosion. To improve the efficacy of the In2S3 nanosheets in saline water, the charge-carrier transportation ability of In2S3 is aimed to increase by decorating S-C3N4-dots on In2S3. The heterostructure of type-II is developed by sensitization of S-C3N4-dots on In2S3. It increases both the transportation of charge carriers as well as separation. In the heterostructure, the transient decay time (τ) increases, which indicates a decrease in photogenerated charge-carrier recombination. S-C3N4-dots also act as an optical antenna and increase the range of visible light absorbance of In2S3. The heterostructure can generate ∼2.38-fold higher photocurrent density of 1.18 V versus RHE in 3.5 wt % NaCl. The photoconversion efficiency of the heterostructure is 0.88% at 0.95 V versus RHE. The nanosheets of In2S3 and In2S3/S-C3N4-dots are stable, and photocurrent density is measured up to 2700 s under continuous back-illumination conditions.

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A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells

Cited by 16 publications

References 53 publications

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Nanosheets of In₂S₃/S-C₃N₄-Dots for Solar Water-Splitting in Saline Water

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A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells

Cited by 16 publications

References 53 publications

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Theoretical Insights of Degenerate ZrS2 as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Nanosheets of In2S3/S-C3N4-Dots for Solar Water-Splitting in Saline Water

Contact Info

Product

Resources

About

Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Nanosheets of In₂S₃/S-C₃N₄-Dots for Solar Water-Splitting in Saline Water