Here,
we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs
(G/A/G) nanowire (NW) photodetector that operates efficiently at room
temperature. Based on the I-type band structure, the device can realize
a two-dimensional electron–hole tube (2DEHT) structure for
the substantial performance enhancement. The 2DEHT is observed to
form at the interface on both sides of GaAs/AlGaAs barriers, which
constructs effective pathways for both electron and hole transport
in reducing the photocarrier recombination and enhancing the device
photocurrent. In particular, the G/A/G NW photodetector exhibits a
responsivity of 0.57 A/W and a detectivity of 1.83 × 1010 Jones, which are about 7 times higher than those of the pure GaAs
NW device. The recombination probability has also been significantly
suppressed from 81.8% to 13.2% with the utilization of the 2DEHT structure.
All of these can evidently demonstrate the importance of the appropriate
band structure design to promote photocarrier generation, separation,
and collection for high-performance optoelectronic devices.
Nanowire photodetectors, which have the advantages of fast response and high photoelectric conversion efficiency, can be widely applied in various industries. However, the rich surface states result in large dark current and can hinder the development of high-performance nanowire photodetectors. In this paper, the influence and mechanism of sulfur surface passivation on the dark current of a single GaAs nanowire photodetector have been studied. The dark current is significantly reduced by about 30 times after surface passivation. We confirm that the origin of the reduction of dark current is the decrease in the surface state density. As a result, a single GaAs nanowire photodetector with low dark current of 7.18 × 10 pA and high detectivity of 9.04 × 10 cmHzW has been achieved. A simple and convenient way to realize high-performance GaAs-based photodetectors has been proposed.
We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.
Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have been widely reported because they are promising as an alternative for high-performance devices. Owing to the Schottky built-in electric fields in the MSM structure photodetectors, enhancements in photoresponsivity can be realized. Thus, strengthening the built-in electric field is an efficacious way to make the detection capability better. In this study, we fabricate a single GaAs nanowire MSM photodetector with superior performance by doping-adjusting the Fermi level to strengthen the built-in electric field. An outstanding responsivity of 1175 A/W is obtained. This is two orders of magnitude better than the responsivity of the undoped sample. Scanning photocurrent mappings and simulations are performed to confirm that the enhancement in responsivity is because of the increase in the hole Schottky built-in electric field, which can separate and collect the photogenerated carriers more effectively. The eloquent evidence clearly proves that doping-adjusting the Fermi level has great potential applications in high-performance GaAs nanowire photodetectors and other functional photodetectors.
Perovskite materials and their optoelectronic devices have attracted intensive attentions in recent years. However, it is difficult to further improve the performance of perovskite devices due to the poor stability and the intrinsic deep level trap states (DLTS), which are caused by surface dangling bonds and grain boundaries. Herein, the CH 3 NH 3 PbBr 3 perovskite microcrystal is encapsulated by a dense Al 2 O 3 layer to form a microenvironment. Through optical measurement, it is found that the structure of perovskite can be healed by itself even under high temperature and long-time laser illumination. The DLTS density decreases nearly an order of magnitude, which results in 4-14 times enhancement of light emission. The observation is ascribed to the micron-level environment, which serves as a self-sufficient high-vacuum growth chamber, where the components of the perovskite are completely retained when sublimated and the decomposed atoms can re-arrange after thermal treatment. The modified structure showing high thermal stability is able to maintain excellent optical and lasing stability up to 2 years. This discovery provides a new idea and perspective for improving the stability of perovskite and can be of practical interest for perovskite device application.
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