Perfluorooctane sulfonate (PFOS) and perfluorooctanoic acid (PFOA) are shown to be globally distributed, environmentally persistent, and bioaccumulative. Although the toxicities of these compounds were reported, the cleanup procedure from the environment is not developed because of their inertness. In this report the sonochemical degradations of PFOS and PFOA to the products through the fission of the perfluorocarbon chains were observed and the half-life times of the PFOS and PFOA degradations under an argon atmosphere determined to be 43 and 22 min, respectively. The shortening of perfluorocarbon chain of PFOS and PFOA leads to the lowering of the toxicity in view of the decrease of the persistence, and the technique would contribute to the remediation of the environmental pollution by these compounds.

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We have fabricated phototubes with photocathodes consisting of the Mg-doped GaN films. The spectral shapes of the response and the quantum efficiency (QE) strongly depend on the Mg-doping concentration. The calibrated QE of the photocathode is maximized to be 71.9% at a photon energy of 5.4 eV by a Mg-doping concentration of 3.0×1019cm−3. Consequently, a phototube with the GaN-based photocathode is realized to demonstrate a very high QE, more than 50% and sharp cutoff characteristic over three orders of magnitude.

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We have succeeded in fabricating ultraviolet (UV) GaN/AlGaN laser diodes without any crack generation on a whole 2-in. sapphire substrate using a hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. The UV laser diodes lased in the peak wavelength range from 355.4 to 361.6 nm under a pulsed current operation at room temperature. We have also investigated both parameters, material gain and optical-internal loss in GaN/AlGaN multiple quantum wells (MQWs). The actual threshold currents of the UV laser diodes were practically in agreement with the estimated threshold current from these parameters. This layer structure is one of the solutions for the purpose of high-yield production of UV photonic devices.