Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substrates

Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup

“…Sample S3 was grown at 623 K using a nonconventional MBE technique called migration enhanced epitaxy (MEE), which consists of alternated growth of Ga and P atomic layers, here with Ga as prelayer. This technique allows a twodimensional growth mode even at relatively low growth temperature (Takagi et al, 1998). APD analyses were performed on two other 45 nm GaP/Si samples: S4 and S5.…”

Light emitting diodes on silicon substrates: preliminary results

“…At first, the idea to integrate direct bandgap III-V materials (GaAs, InP) as active emitters on Si substrate by heteroepitaxy has been proposed [2]. However, some nontrivial problems (large lattice mismatch, difference in thermal expansion coefficients and polar-on-nonpolar interface) [3] lead to high dislocation density (about 10 6 cm -2 ), which cause the rapid degradation of laser diode. It is also possible to use a III-V material lattice-matched to Si substrate as buffer layer, prior to the deposition the active zone.…”

Growth of Si/III–V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits

“…Especially, a GaPN with a 2% N content can be lattice-matched to Si theoretically, and is one of the candidates for the realization of the OEICs. We have already realized a dislocation-free Si/GaP/GaPN/GaP/Si structure [4] using migration-enhanced epitaxy (MEE) [5] and molecular beam epitaxy (MBE). Furthermore, a dislocation-free GaAsPN/GaPN-strained QW structure on a Si substrate with a thin GaP layer grown by MEE has been already grown by MBE [6].…”