Growth of Si/III–V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

“…All growths were performed in a two-chamber solid source molecular beam epitaxy (MBE) apparatus system [22]. Ga and P 2 fluxes were supplied by evaporating metal Ga and polycrystalline InP, respectively, with conventional thermal effusion cells.…”

Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

“…The III-V-N alloy semiconductors latticematched to Si, such as GaPN and InGaPN, are among the suitable materials. We have already fabricated a dislocation-free Si/GaP/ GaPN/GaP/Si structure [2] and an OEIC test chip [3]. Since the direct growth of a GaPN layer on a Si substrate comes along with a large number of defects [4], the GaP layer grown on the Si substrate is needed as an intermediate layer.…”

Light emitting diodes on silicon substrates: preliminary results

“…It is also possible to use a III-V material lattice-matched to Si substrate as buffer layer, prior to the deposition the active zone. This procedure has already been studied recently [4][5][6]. A GaP buffer layer is grown because of its close lattice parameter to Si, high thermal conductivity and broad transparency range [7].…”