Growth of oxide compounds under dynamic atmosphere composition

Abstract

Commercially available gases contain residual impurities leading to a background oxygen partial pressure of typically several 10 −6 bar, independent of temperature. This oxygen partial pressure is inappropriate for the growth of some single crystals where the desired oxidation state possesses a narrow stability field. Equilibrium thermodynamic calculations allow the determination of dynamic atmosphere compositions yielding such self adjusting and temperature dependent oxygen partial pressures, that crystals like ZnO, Ga2O3, or Fe1−xO can be grown from the melt.

Czochralski growth and characterization of β‐Ga2O3 single crystals

“…At high temperatures Ir remains intact even at high oxygen concentrations due to its catalytic surface effect. More details regarding the dynamic growth atmosphere and Ga-O binary system can be find in [35] and [36], respectively. To find out how different growth atmospheres may influence the evaporation of the Ga 2 O 3 compound, a number of thermodynamic calculations were carried out using the FactSage software.…”

The radial distribution of dopant (Cr, Nd, Yb, or Ce) in yttrium aluminum garnet (Y3Al5O12) single crystals grown by the micro-pulling-down method

“…The published values are listed in Table 3; k 0 Yb C1:021:1, k 0 Cr C0:922, k 0 Nd C0:1520:2, and k 0 Ce C0:008, except for Yb and Nd for m-PD with a Type O crucible [9,10]. The atmosphere composition is very important because it sometimes provides serious effects [12]. In Table 3, the listed k 0 values except for [11,20] were obtained under nitrogen or argon atmosphere and the k 0 are not so varied.…”

Chemically assisted vapour transport for bulk ZnO crystal growth

“…Other growth methods based on the melt approach are currently proposed [8]. In this case, one has to resort to high pressure and high temperature, which is always difficult in crystal growth (safety, set-up dimensions and crucible costs).…”