Chemically assisted vapour transport for bulk ZnO crystal growth

Santailler, Jean‐Louis; Audoin, C.; Chichignoud, G.; Obrecht, Rémy; Kaouache, Belkhiri; Marotel, Pascal; Pelenc, D.; Brochen, Stéphane; Merlin, J.; Bisotto, I.; Granier, Carole; Feuillet, G.; Lévy, François

doi:10.1016/j.jcrysgro.2010.08.046

Cited by 18 publications

(11 citation statements)

References 21 publications

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“…The crystal quality, as investigated by X-ray rocking curve measurement using the (0002) reflection, is 24.2 arcsec. This value is close to high-quality undoped ZnO crystal using the hydrothermal method (18 arcsec) [10] and higher than those of ZnO single crystal using the chemical vapour transport method (90-200 arcsec) [11] and Scandium-doped one using the hydrothermal method (38.9-46.1 arcsec) [12], This means that we have obtained a high quality In-doped ZnO single crystal using the hydrothermal method. The growth rates for both the <0001> and <000-1> directions were about 80 m day.…”

Section: Resultssupporting

confidence: 65%

Fabrication of In-Doped ZnO Scintillator Mounted on a Vacuum Flange

Kano¹,

Wakamiya²,

Yamanoi

et al. 2012

IEEE Trans. Nucl. Sci.

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High quality In-doped ZnO single crystal was grown using the hydrothermal method. The growth rate for both <0001> and <000-1> directions is about 80 m/day. The X-ray rocking curve (XRC) full width at half maximum (FWHM) of the (0002) reflection is 24.2 arcsec. In order to make it possible to use this material as a scintillator for in situ imaging of soft X-ray laser with high spatial resolution, we prepared an In-doped ZnO wafer (9.0 mm x 9.0 mm x 0.75 mm) and mounted it on a vacuum flange. The decay time constant is evaluated to be 120 ps, therefore making it an ideal scintillator for in situ imaging device of soft X-ray laser with high spatial resolution. Furthermore, In-doped ZnO scintillator with such short decay time constant is suitable for high accuracy alignment and synchronization of ultrafast, short wavelength laser sources for pump-and-probe experiments.

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Section: Resultssupporting

confidence: 65%

Fabrication of In-Doped ZnO Scintillator Mounted on a Vacuum Flange

Kano¹,

Wakamiya²,

Yamanoi

et al. 2012

IEEE Trans. Nucl. Sci.

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“…In addition, when transporting agent CO was used, the level of carbon contamination in the crystals was not dramatically high, at least in comparison with the impurity content in hydrothermally grown ZnO crystals [6].…”

Section: Zinc Oxide Purificationmentioning

confidence: 99%

Improved Efficiency of ZnO and Ge Purification

Pekar¹,

Singaevsky²,

Lokshin³

et al. 2019

JCPT

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Unconventional ways to improve the efficiency of purification of two different semiconductor materials of current interest, ZnO and Ge, are described. It is shown that, by using chemically assisted vapour transport of ZnO with carbon as a transporting agent, the degree of chemical purity of ZnO can be increased by more than an order of magnitude. It is also found that heating of the molten Ge in the experimentally determined narrow (about 20˚C wide) temperature range in which an intense evaporation of certain substances is observed, leads to a significant reduction of germanium contamination. As a result, a subsequent deep purification of pre-heat treated germanium by zone refining can be achieved at twice reduced (as compared with "non-treated" Ge) number of passes of a boat with germanium through the melting zones. Thus, the Ge purification process becomes faster, cheaper and more efficient.

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“…[44]). Another approach for ZnO growth proposed by Santailler et al [47] is chemically assisted CVT, which is a combination of the CVT and PVT methods. The growth rate is very small, usually less than 2 mm/day.…”

Section: Znomentioning

confidence: 99%

Growth Measures to Achieve Bulk Single Crystals of Transparent Semiconducting and Conducting Oxides

Galazka

2015

Handbook of Crystal Growth

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Chemically assisted vapour transport for bulk ZnO crystal growth

Cited by 18 publications

References 21 publications

Fabrication of In-Doped ZnO Scintillator Mounted on a Vacuum Flange

Fabrication of In-Doped ZnO Scintillator Mounted on a Vacuum Flange

Improved Efficiency of ZnO and Ge Purification

Growth Measures to Achieve Bulk Single Crystals of Transparent Semiconducting and Conducting Oxides

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