Fabrication of In-Doped ZnO Scintillator Mounted on a Vacuum Flange

Abstract

High quality In-doped ZnO single crystal was grown using the hydrothermal method. The growth rate for both <0001> and <000-1> directions is about 80 m/day. The X-ray rocking curve (XRC) full width at half maximum (FWHM) of the (0002) reflection is 24.2 arcsec. In order to make it possible to use this material as a scintillator for in situ imaging of soft X-ray laser with high spatial resolution, we prepared an In-doped ZnO wafer (9.0 mm x 9.0 mm x 0.75 mm) and mounted it on a vacuum flange. The decay time constant is evaluated to be 120 ps, therefore making it an ideal scintillator for in situ imaging device of soft X-ray laser with high spatial resolution. Furthermore, In-doped ZnO scintillator with such short decay time constant is suitable for high accuracy alignment and synchronization of ultrafast, short wavelength laser sources for pump-and-probe experiments.

Intense and fast UV emitting ZnO microrods fabricated by low temperature aqueous chemical growth method

“…The PL spectrum may be dominated by the phonon replicas with a maximum at the first LO phonon replica whose position and intensity depend on the growth conditions and on the defect concentration [23,24]. Aside from the LO phonon replica contributions, the slight red-shift can also be attributed to the thermal effects caused by laser heating [25,26], to stress or strain caused by the lattice mismatch with the Si substrate [27,28], or to self-absorption and inhomogeneous broadening caused by defects [29]. On the other hand, the visible emission with peak around 618 nm (2.01 eV) corresponds to the defect-related emission [4,30].…”

Effect of Substrate and Thickness on the Photoconductivity of Nanoparticle Titanium Dioxide Thin Film Vacuum Ultraviolet Photoconductive Detector

“…As such, development of detectors in the VUV region is also crucial. Various reports focused on the detection of VUV light through scintillation in rare earth-doped wide band gap insulators [4][5][6] and wide band gap semiconductors [7][8][9]. Scintillation relies on the excitation and de-excitation of an activator ion (in rare earth-doped insulators), or the generation and recombination of electron and hole pairs (in wide band gap semiconductors), that result in photoluminescence (PL) emission, usually in the longer ultraviolet or visible wavelength regions, followed by the detection of this PL emission using a conventional detector, such as a photomultiplier tube.…”

Direct measurement of refractive index and dispersion of optical glass by dual-prism configuration with imaging spectrograph

“…In semiconductors and wide band gap insulators, doping could result to energy transfer, leading to picosecond and sub-nanosecond luminescence decay times and improved temporal resolutions. [11][12][13][14] For laser applications, crystals and glasses are doped with rare earth activator ions to elicit laser emission. [15][16][17] Optimal doping concentration is needed to achieve efficient laser pump absorption while minimizing fluorescence quenching and saturation effects.…”