Growth of oriented aluminium nitride films on silicon by chemical vapour deposition

Khan, A. H.; Odeh, M. F.; Meese, J. M.; Charlson, E. J.; Stacy, T.; Popovici, G.; Prelas, M. A.; Wragg, J. L.

doi:10.1007/bf00414216

Cited by 18 publications

(15 citation statements)

References 15 publications

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“…The first deposition of polycrystalline AlN by CVD was performed by Renner and Anorg in 1959 [27], and most of the studies related to polycrystalline AlN grown by CVD in the Al-N-Cl-H system were achieved at deposition temperature between 600 and 1400°C [33][34][35][36][37][38][39]. They showed a slight decrease of AlN deposition rate at high temperature.…”

Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Pons

Boichot

Coudurier

et al. 2013

Surface and Coatings Technology

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Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Pons

Boichot

Coudurier

et al. 2013

Surface and Coatings Technology

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“…34,35 Among various techniques employed for the deposition of AlN thin films, the reactive sputtering in any of its typical configurations (DC, RF, magnetron, etc.) has been most widely used because it offers several important advantages, such as low deposition temperature, fine tuning of the material characteristics, and low processing cost.…”

Section: Aln Thin-film Processingmentioning

confidence: 99%

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

Hullavarad

Vispute

Nagaraj

et al. 2006

J. Electron. Mater.

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In this paper we report recent advances in pulsed-laser-deposited AlN thin films for high-temperature capping of SiC, passivation of SiC-based devices, and fabrication of a piezoelectric MEMS/NEMS resonator on Pt-metallized SiO 2 /Si. The AlN films grown using the reactive laser ablation technique were found to be highly stoichiometric, dense with an optical band gap of 6.2 eV, and with a surface smoothness of less than 1 nm. A low-temperature buffer-layer approach was used to reduce the lattice and thermal mismatch strains. The dependence of the quality of AlN thin films and its characteristics as a function of processing parameters are discussed. Due to high crystallinity, near-perfect stoichiometry, and high packing density, pulsed-laser-deposited AlN thin films show a tendency to withstand high temperatures up to 1600°C, and which enables it to be used as an anneal capping layer for SiC wafers for removing ion-implantation damage and dopant activation. The laser-deposited AlN thin films show conformal coverage on SiC-based devices and exhibit an electrical break-down strength of 1.66 MV/cm up to 350°C when used as an insulator in Ni/AlN/SiC metal-insulator-semiconductor (MIS) devices. Pulsed laser deposition (PLD) AlN films grown on Pt/ SiO 2 /Si (100) substrates for radio-frequency microelectrical and mechanical systems and nanoelectrical and mechanical systems (MEMS and NEMS) demonstrated resonators having high Q values ranging from 8,000 to 17,000 in the frequency range of 2.5-0.45 MHz. AlN thin films were characterized by x-ray diffraction, Rutherford backscattering spectrometry (in normal and oxygen resonance mode), atomic force microscopy, ultraviolet (UV)-visible spectroscopy, and scanning electron microscopy. Applications exploiting characteristics of high bandgap, high bond strength, excellent piezoelectric characteristics, extremely high chemical inertness, high electrical resistivity, high breakdown strength, and high thermal stability of the pulsed-laser-deposited thin films have been discussed in the context of emerging developments of SiC power devices, for high-temperature electronics, and for radio frequency (RF) MEMS.

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“…The sintering of AlN generally requires high temperatures of 1750-1900 • C with sintering aids such as Y 2 O 3 or CaO. 25,26 More recent AlN synthesis methods involve gas phase deposition for electronic device applications, such as reactive magnetron sputtering, 15,27 chemical vapor deposition, 28,29 molecular beam epitaxy, [30][31][32] pulsed laser deposition, 33,34 atomic layer epitaxial, 35,36 and so forth. In general, gas-phase deposition offers impurity-free products with perfectly defined structures.…”

Section: Introductionmentioning

confidence: 99%

Reactions of metal chlorides with hexamethyldisilazane: Novel precursors to aluminum nitride and beyond

Zhang

Indris

et al. 2021

J Am Ceram Soc.

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Metal nitrides are intensely investigated because they can offer high melting points, excellent corrosion resistance, high hardness, electronic and magnetic properties superior to the corresponding metals/metal oxides. Thus, they are used in diverse applications including refractory materials, semiconductors, electronic devices, and energy storage/conversion systems. Here, we present a simple, novel, scalable and general route to metal nitride precursors by reactions of metal chlorides with hexamethyldisilazane [HMDS, (Me 3 Si) 2 NH] in tetrahydrofuran or acetonitrile at low temperatures (ambient to 60 • C/N 2 ). Such reactions have received scant attention in the literature. The work reported here focuses primarily on the Al-HMDS precursor produced from the reaction of AlCl 3 with HMDS (mole ratio = 1:3) characterized by matrix-assisted laser desorption/ionization-time of flight, Fourier-transform infrared spectroscopy, thermogravimetric analysis-differential thermal analysis, and multinuclear nuclear magnetic resonance spectroscopy (NMRs) for chemical and structural analyses. The Al-HMDS precursor heated to 1600 • C/4 h/N 2 produces aluminum nitride, characterized by X-ray powder diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy/energy-dispersive Xray spectroscopy, and magic-angle spinning NMR. On heating to 800-1200 • C/4 h/N 2 , the precursor transforms to an amorphous, oxygen-sensitive powder with very high surface areas (>200 m 2 /g) indicating nanosized particles, which can be used as additives to polymer matrices to modify their thermal stabilities. Al 2 O 3 is also presented in the final product after heating, due to its high susceptibility to oxidation. This approach was extended via proof-of-concept studies to other metal chloride systems, including Zn-HMDS, Cu-HMDS, Fe-HMDS, and Bi-HMDS. The formed precursors are volatile, offering the potential utility as gas-phase deposition precursors for their corresponding metal nitrides.

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Growth of oriented aluminium nitride films on silicon by chemical vapour deposition

Cited by 18 publications

References 15 publications

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

Reactions of metal chlorides with hexamethyldisilazane: Novel precursors to aluminum nitride and beyond

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