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A new variation of the deep level transient spectroscopy technique is presented. In the new approach, the current transient is integrated, yielding a charge transient. A simple circuit for integrating the current is given and is analyzed. The charge transient technique is compared to previous capacitance transient and current transient techniques, and the advantages of the new method are discussed. The effects of diode leakage currents are also analyzed. Data are presented for defects in neutron irradiated Si.

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Uniaxial stress has been used with transient spectroscopy to study the level at E c -0.17 eV in neutron-irradiated silicon. The defect symmetry, observed stress-induced electronic redistribution, and preferential stress-induced defect orientation have been determined and the reorientation activation energy has been measured. All of these effects are consistent with the A center.

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