High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Pons, M.; Boichot, R.; Coudurier, Nicolas; Claudel, A.; Blanquet, Elisabeth; Lay, S.; Mercier, F.; Pique, D.

doi:10.1016/j.surfcoat.2013.06.011

Cited by 25 publications

(27 citation statements)

References 48 publications

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“…We have already shown that the growth of thin AlN layers (<500 nm) leads to tensile stress at room temperature [17]. We discuss in this the NbN layer with ǫ epi =-11%.…”

Section: Role Of Aln Layer On Residual Stress In Nbn Layersmentioning

confidence: 86%

Niobium nitride thin films deposited by high temperature chemical vapor deposition

Mercier

Coindeau

Lay

et al. 2014

Surface and Coatings Technology

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“…We have already shown that the growth of thin AlN layers (<500 nm) leads to tensile stress at room temperature [17]. We discuss in this the NbN layer with ǫ epi =-11%.…”

Section: Role Of Aln Layer On Residual Stress In Nbn Layersmentioning

confidence: 86%

Niobium nitride thin films deposited by high temperature chemical vapor deposition

Mercier

Coindeau

Lay

et al. 2014

Surface and Coatings Technology

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“…This indicates that the c lattice parameter is much affected by the annealing temperature which can be explained by the presence of the strain in the crystal. This strain is the sum of the extrinsic stress due to the thermal expansion mismatch between the crystal and substrate, and the intrinsic stresses developed during the growth of the film [9]. In order to establish a correlation between the structural properties and SAW device performances, the variation of the net peak area of the (002) plan and the relative insertion loss (IL curve was reported in previous works [4]) with the variation of the annealing temperature is shown in figure 4.…”

Section: Resultsmentioning

confidence: 99%

Correlation between structural properties of AlN/Sapphire and performances of SAW devices in wide temperature range

Aissa

Elmazria

Boulet

et al. 2014

2014 IEEE International Ultrasonics Symposium

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International audienceAluminum nitride (AlN) on sapphire is a promising substrate for surface acoustic wave (SAW) sensors operating at high temperatures and high frequencies. To get an experimental measure of the suitability and temperature stability of such devices an experimental relationship between surface acoustic wave (SAW) performances of AlN thin films and their structural properties was investigated in the same range of temperature between 50°C and 1000°C. The crystalline structure of AlN films was examined in-situ versus temperature (50-1000°C) by X-ray diffraction. The results reveal that the AlN film remains well oriented (002) even at the high temperature. A significant change in the values of the c-lattice parameter has been observed due to the thermal expansion mismatch and strain relaxation between the AlN crystal and substrate. The correlation between the crystalline quality and the SAW performances of AlN/Sapphire reveal that the evolution of the crystalline quality of the AlN film with temperature (in a range of 600-850 °C) follows similar trends as the evolution of relative insertion loss. The surface oxidation of the film has been observed at high annealing temperature (>850°C) which reduce the crystalline quality and piezoelectric response of the AlN film

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“…This is because AlN exhibits the desired combination of characteristics such as high thermal conductivity (320 W/mK), good corrosion resistance, high hardness, high electrical resistivity and high wear resistance . In this regards various methods have been developed for the formation of aluminum nitride including physical vapor deposition (PVD), chemical vapor deposition (CVD), glow discharge,, magnetron sputtering,, active screen plasma treatment and ion‐implantation…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Mechanical and Structural Traits of Aluminum Using Low Energy Plasma Focus Device

et al. 2019

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Owing to good machinability, low weight and high specific strength, aluminum is widely used in aerospace and automotive industries. However, low mechanical strength limits its wide spread use in mainstream industries. In this study, nitriding of aluminum was performed with a stream of low energy ions in 1.8 kJ Mather type dense plasma focus (DPF) device. The axial distance from the anode tip was varied in steps to study the effect of the stream length on structural and mechanical properties of the nitrided samples. XRD and Raman analysis confirmed the formation of aluminum nitride (AlN) on the plasma exposed surface. Williamson‐Hall (W−H) study revealed significant improvement in crystallinity and strain of the nitride samples. The most favorable results on mechanical and structural properties of the nitrided samples were obtained at an axial distance of 10 cm. The improved texture and maximum dislocation density for typical AlN (311) is obtained at the optimum distance. The micro‐hardness of the nitrided samples was measured ∼4.5 times higher than the base material.

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High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Cited by 25 publications

References 48 publications

Niobium nitride thin films deposited by high temperature chemical vapor deposition

Niobium nitride thin films deposited by high temperature chemical vapor deposition

Correlation between structural properties of AlN/Sapphire and performances of SAW devices in wide temperature range

Enhancement of Mechanical and Structural Traits of Aluminum Using Low Energy Plasma Focus Device

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