This paper explores the possibility of using AlN/sapphire piezoelectric bilayer structures for high-temperature SAW applications. To determine the temperature stability of AlN, homemade AlN/sapphire samples are annealed in air atmosphere for 2 to 20 h at temperatures from 700 to 1000°C. Ex situ X-ray diffraction measurements reveal that the microstructure of the thin film is not affected by temperatures below 1000°C. Ellipsometry and secondary ion mass spectroscopy investigations attest that AlN/sapphire is reliable up to 700°C. Beyond this temperature, both methods indicate ongoing surface oxidation of AlN. Additionally, Pt/Ta and Al interdigital transducers are patterned on the surface of the AlN film. The resulting SAW devices are characterized up to 500°C and 300°C, respectively, showing reliable frequency response and a large, quasi-constant temperature sensitivity, with a first-order temperature coefficient of frequency around -75 ppm/°C. Between room temperature and 300°C, both electromechanical coupling coefficient K(2) and propagation losses increase, so the evolution of delay lines' insertion losses with temperature strongly depends on the length of the propagation path.

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Very high frequency surface acoustic wave (SAW) devices based on AlN/diamond layered structures were fabricated by direct writing using e-beam lithography on the nucleation side of chemical vapor deposition diamond. The interdigital transducers made in aluminum with resolutions down to 500nm were patterned on AlN/diamond layered structure with an adapted technological process. Experimental results show that the Rayleigh wave and the higher modes are generated. The fundamental frequency around 5GHz was obtained for this layered structure SAW device and agrees well with calculated results from dispersion curves of propagation velocity and electromechanical coupling coefficient.

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We report in this paper on the study and the realization of surface acoustic wave devices based on an AlN/diamond layered structure intended for the X band ͑8 GHz͒. Both x-ray diffraction and transmission electronic microscopy, used for characterization of the structural properties of the AlN/diamond structure, have shown ͑002͒ highly oriented sputtered AlN films on free-standing chemical vapor deposition diamond films. Surface roughness of the AlN/diamond structure was measured by atomic force microscopy and showed a very low surface roughness, less than 1 nm. Low surface roughness is very important to reduce the acoustic propagation losses. SAW devices operating in the range of 8 GHz were realized by the combination of the high velocity of the AlN/diamond layered structure and the high lateral resolution obtained using e-beam lithography ͑EBL͒. Due to high electrical resistivity of the AlN film, interdigital transducers with submicronic resolution were patterned by an adapted technological EBL process. The analysis of device performances in terms of electromechanical coupling coefficient and temperature stability was carried out and discussed. The dispersion of both parameters as a function of wavelength was experimentally determined, and showed the obtention of an electromechanical coupling coefficient up to 1.4% and a temperature coefficient of frequency varying between 9 and 20 ppm/°C. The dispersion curves of phase velocity were also analyzed and experimental results show a good agreement with theoretical calculations.

High-quality surface acoustic wave (SAW) filters based on aluminum nitride (AlN)/diamond layered structures were prepared using the nucleation side of polycrystalline chemical vapor deposition (CVD) diamond, removed from a silicon substrate by wet etching. Highly oriented AlN thin films with optimized piezoelectric properties and with various thicknesses were sputtered onto the nucleation side of freestanding diamond. The effect of AlN thickness on the SAW phase velocity, the coupling coefficient, and the device characteristics were investigated. Experimental results show that the Rayleigh wave and the higher modes are generated. These results agree well with calculated dispersion curves and demonstrate that a high electromechanical coupling coefficient together with a high phase velocity can be obtained by using the nucleation side of freestanding CVD diamond layer.

International audienceAlN/sapphire layered structure has been investigated as a potential substrate for surface acoustic wave (SAW) devices operating at high temperatures up to 950 °C under air atmosphere. Frequency characterizations of the SAW delay lines based on this structure indicate a slight increase of 2 dB in the insertion losses after annealing for 30 min at 900 °C. Scanning electron and atomic force microscopy as well as x-ray diffraction measurements suggest that theses losses are due to the deterioration of the Pt/Ta electrodes and to a slight oxidation of the AlN film

While surface acoustic wave (SAW) sensors have been used to measure temperature, pressure, strains, and low magnetic fields, the capability to measure bipolar fields and high fields is lacking. In this paper, we report magnetic surface acoustic wave sensors that consist of interdigital transducers made of a single magnetostrictive material, either Ni or TbFe 2 , or based on exchange-biased (Co=IrMn) multilayers. By controlling the ferromagnet magnetic properties, high-field sensors can be obtained with unipolar or bipolar responses. The issue of hysteretic response of the ferromagnetic material is especially addressed, and the control of the magnetic properties ensures the reversible behavior in the SAW response.