Growth of In-doped CdTe from Te excess solution and its characteristics as a γ-ray detector

The effect of chlorine doping concentration on the quality of CdTe single crystals grown by the modified physical vapor transport method

“…An interesting observation of the elimination of Te precipitates by Cl doping during crystal growth was reported by Jayatirtha et al [18]. However, this fact is in contradiction with the previous studies [19,20] and participation of chlorine in the improvement of CdTe morphology is not proved so far.…”

PVT growth of Cd1−xZnxTe(x∼0.04) films sensitive to radial rays

“…From the figure, it is seen that the resistivity of the grown film increases about two orders of magnitude by using the reservoir. It is expected that chlorine (Cl) atoms in CdCl 2 play an important role for obtaining high resistance films because of a self-compensation effect [11][12][13]. That is, Cl atoms incorporated into the film replaced the Cd atomic site, and it works in the following ways depending on the incorporated quantity of Cl.…”

Thin film growth of Cd1‐xZnxTe and its application to X‐ray sensor

“…The first is to regulate the Cd vapor pressure for adjusting the stoichiometry for undoped films. Secondly, CdCl 2 vapor pressure is regulated to incorporate the chorine to the film and it becomes high resistivity by self-compensation effect due to cadmium vacancy and chorine donor complex [6]. The third one is to prepare wide band-gap film by increasing the mole fraction of ZnTe and this produces less intrinsic carriers due to wide gap.…”