PVT growth of Cd1−xZnxTe(x∼0.04) films sensitive to radial rays

Takahashi, Junichi; Mochizuki, Katsumi; Hitomi, Keitaro; Shoji, Tadayoshi

doi:10.1016/j.jcrysgro.2004.05.068

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2015

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“…The control of Cd vapor pressures by the hot-wall method and CdCl 2 vapor pressures by PVT method and the effects on the electrical properties of the grown films (x=0.04) were reported previously [7,8]. Table 1 shows summarized results.…”

Section: Methodsmentioning

confidence: 69%

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Thin film growth of Cd_1‐xZn_xTe and its application to X‐ray sensor

Mochizuki

Takahashi

Nakamura

2015

Phys. Status Solidi C

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Cd1‐xZnxTe (x∼0.5) thin films with less than 300μm are grown on ITO/glass substrate by Hot‐wall and PVT methods, one of the sublimation methods. In order to obtain the films with high resistivity and good quality for X‐ray sensor, three attempts have been tried in the experiments. The one is stoichiometry control of CZT (x = 0.04) films, which were grown under controlled Cd vapor pressure. The second is excess chlorine doping to the films (x = 0.04) by controlling CdCl2 vapor pressure during growth process. The third is to change composition x = 0.04‐0.50, which increases band gap. Through these methods, best films with good X‐ray response was obtained for the third case of the films with the composition x = 0.20. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 69%

“…The third one is to prepare wide band-gap film by increasing the mole fraction of ZnTe and this produces less intrinsic carriers due to wide gap. The first and second methods were briefly reported before [7,8]. In this study, the results of the third method and synthetic evaluation through three methods are reported.…”

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confidence: 99%