2007
DOI: 10.1016/j.jcrysgro.2007.07.041
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The effect of chlorine doping concentration on the quality of CdTe single crystals grown by the modified physical vapor transport method

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Cited by 33 publications
(35 citation statements)
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References 45 publications
(59 reference statements)
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“…The second cadmium component was found to be co-distributed with chlorine, which was distributed throughout the mixed gold-oxide region and had a peak concentration of 8-9 at% (∼10 21 cm −3 ) after an etch time of ∼13 000 s, at the interface with the bulk. This concentration was above the solubility limit of 10 19 cm −3 in CdTe [36]. The distributions of chlorine and cadmium are shown in figure 12, along with an insert showing the two primary components identified by PCA.…”
Section: Xps Depth Profilesmentioning
confidence: 94%
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“…The second cadmium component was found to be co-distributed with chlorine, which was distributed throughout the mixed gold-oxide region and had a peak concentration of 8-9 at% (∼10 21 cm −3 ) after an etch time of ∼13 000 s, at the interface with the bulk. This concentration was above the solubility limit of 10 19 cm −3 in CdTe [36]. The distributions of chlorine and cadmium are shown in figure 12, along with an insert showing the two primary components identified by PCA.…”
Section: Xps Depth Profilesmentioning
confidence: 94%
“…This was attributed to the preferential removal of cadmium by the gold chloride solution and subsequent precipitation of cadmium chloride due to supersaturation of the Cd 2+ and Cl − containing solution. The precipitation of CdCl 2 will reduce the crystal quality and increase voiding [33][34][35][36] due to the solubility of chloride salts and sub-surface stress from lattice mismatches causing strain and local deformations. The bright regions observed in the bright field image of figure 4 were consistent with porosity or voiding.…”
Section: Fib and Tem Analysismentioning
confidence: 99%
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“…3. Результаты расчетов проводимости (а) и сопротивле-ния (б) CdTe: а -смоделированные (сплошные линии) и эксперимен-тальные (точки) [10,11] зависимости проводимости CdTe от давления кадмия; б -смоделированные (сплошная линия) и экспериментальные (точки) [12,13] Abstract. Theoretical analysis of optimization options for the properties of CdTe absorber layer is an important task for increasing the efficiency of CdTe/CdS heterojunction based thin−film solar cells.…”
Section: библиографический списокunclassified
“…Because high bias voltage is needed to improve the charge collection efficiency of the detection devices, resistivity of the material used should be high enough, close to a semi-insulating state, since electronic noise of the material originating from the leakage current increases with larger amounts of free charge carriers within the semiconductor [8]. However, it has been reported that undoped CdTe bulk * E-mail: jhha@kaeri.re.kr crystal grown from the melt usually has p-type characteristics due to the acceptor-like nature of the inherent point defects including Cd-vacancies [9]. These point defects in the crystals can also behave as traps for increased leakage currents [10].…”
Section: Introductionmentioning
confidence: 99%