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We have developed a pixellated high energy X-ray detector instrument to be used in a variety of imaging applications. The instrument consists of either a Cadmium Zinc Telluride or Cadmium Telluride (Cd(Zn)Te) detector bump-bonded to a large area ASIC and packaged with a high performance data acquisition system. The 80 by 80 pixels each of 250 μm by 250 μm give better than 1 keV FWHM energy resolution at 59.5 keV and 1.5 keV FWHM at 141 keV, at the same time providing a high speed imaging performance. This system uses a relatively simple wire-bonded interconnection scheme but this is being upgraded to allow multiple modules to be used with very small dead space. The readout system and the novel interconnect technology is described and how the system is performing in several target applications.

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A small pixel, spectroscopic, CdTe detector has been developed at the Rutherford Appleton Laboratory (RAL) for X-ray imaging applications. The detector consists of 80 × 80 pixels on a 250 µm pitch with 50 µm inter-pixel spacing. Measurements with an 241 Am γ-source demonstrated that 96% of all pixels have a FWHM of better than 1 keV while the majority of the remaining pixels have FWHM of less than 4 keV. Using the Diamond Light Source synchrotron, a 10 µm collimated beam of monochromatic 20 keV X-rays has been used to map the spatial variation in the detector response and the effects of charge sharing corrections on detector efficiency and resolution. The mapping measurements revealed the presence of inclusions in the detector and quantified their effect on the spectroscopic resolution of pixels.

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Semi-insulating wafers of GaAs material with a thickness of 500 µm have been compensated with chromium by Tomsk State University. Initial measurements have shown the material to have high resistivity (3 × 10 9 Ω cm) and tests with pixel detectors on a 250 µm pitch produced uniform spectroscopic performance across an 80 × 80 pixel array. At present, there is a lack of detectors that are capable of operating at high X-ray fluxes (> 10 8 photons s −1 mm −2 ) in the energy range 5-50 keV. Under these conditions, the poor stopping power of silicon, as well as issues with radiation hardness, severely degrade the performance of traditional detectors. While high-Z materials such as CdTe and CdZnTe may have much greater stopping power, the formation of space charge within these detectors degrades detector performance. Initial measurements made with GaAs:Cr detectors suggest that many of its material properties make it suitable for these challenging conditions. In this paper the radiation hardness of the GaAs:Cr material has been measured on the B16 beam line at the Diamond Light Source synchrotron. Small pixel detectors were bonded to the STFC Hexitec ASIC and were irradiated with 3 × 10 8 photons s −1 mm −2 monochromatic 12 keV X-rays up to a maximum dose of 0.6 MGy. Measurements of the spectroscopic performance before and after irradiation have been used to assess the extent of the radiation damage.

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